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Kvantovaya Elektronika, 2009, Volume 39, Number 8, Pages 727–730 (Mi qe14087)  

This article is cited in 3 scientific papers (total in 3 papers)

Lasers

Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser

V. Ya. Aleshkin, A. A. Dubinov

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The scheme of a semiconductor quantum-well laser is proposed for the simultaneous generation of TE0 and TM0 modes with different frequencies in the near-IR region. The possibility of efficient terahertz difference-frequency generation by this laser is considered. It is shown that for the 100-μm-wide active region of the laser and for the 1-W near-IR modes, the laser power at the difference frequency in the 1 — 8-THz region can achieve ~1 μmW at room temperature.

Full text: PDF file (121 kB)

English version:
Quantum Electronics, 2009, 39:8, 727–730

Bibliographic databases:

PACS: 42.55.Px, 42.60.By
Received: 24.02.2009

Citation: V. Ya. Aleshkin, A. A. Dubinov, “Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser”, Kvantovaya Elektronika, 39:8 (2009), 727–730 [Quantum Electron., 39:8 (2009), 727–730]

Linking options:
  • http://mi.mathnet.ru/eng/qe14087
  • http://mi.mathnet.ru/eng/qe/v39/i8/p727

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. V. Ya. Aleshkin, T. S. Babushkina, A. A. Birykov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, S. M. Nekorkin, Semiconductors, 45:5 (2011), 641  crossref  adsnasa  isi  elib  scopus
    2. V.A. Kukushkin, Optics Communications, 2011  crossref  isi  scopus
    3. M. B. Agranat, I. V. Il'ina, D. S. Sitnikov, High Temperature, 55:6 (2017), 922–934  mathnet  crossref  crossref  isi  elib
  • Квантовая электроника Quantum Electronics
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