Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 2010, Volume 40, Number 1, Pages 73–76 (Mi qe14131)  

This article is cited in 1 scientific paper (total in 1 paper)

Nanostructures

Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system

Yu. K. Verevkina, V. N. Petryakova, Yu. Yu. Gushchinab, C. S. Pengc, C. Tanc, M. Pessac, Z. Wangd, S. M. Olaizolae, S. Tisserandf

a Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
b Research and Education Center for Physics of Solid State Nanostructures, Nizhnii Novgorod State University
c Optoelectronics Research Center, Tampere University of Technology, Finland
d Manufacturing Engineering Centre, Cardiff University, UK
e CEIT and Tecnun (University of Navarra), Spain
f SILIOS Technologies

Abstract: Four-beam laser interference is shown to stimulate the self-organisation of periodic two-dimensional arrays of nanoislands on the surface of GaAs/InGaAs/GaAs epitaxial structures. (Self-organisation is here taken to mean processes that determine the island size.) The island size distribution has two well-defined maxima. The smaller islands (~5 nm) form inside each heat-affected zone, and the larger islands (~15 nm), at the periphery of such zones. The island width is a factor of 20 — 60 smaller than the standing wave period, which can be accounted for in terms of the elastic stress on the surface of the epitaxial film.

Full text: PDF file (276 kB)
References: PDF file   HTML file

English version:
Quantum Electronics, 2010, 40:1, 73–76

Bibliographic databases:

PACS: 62.23.St, 42.62.-b
Received: 06.04.2009
Revised: 03.08.2009

Citation: Yu. K. Verevkin, V. N. Petryakov, Yu. Yu. Gushchina, C. S. Peng, C. Tan, M. Pessa, Z. Wang, S. M. Olaizola, S. Tisserand, “Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system”, Kvantovaya Elektronika, 40:1 (2010), 73–76 [Quantum Electron., 40:1 (2010), 73–76]

Linking options:
  • http://mi.mathnet.ru/eng/qe14131
  • http://mi.mathnet.ru/eng/qe/v40/i1/p73

    SHARE: VKontakte.ru FaceBook Twitter Mail.ru Livejournal Memori.ru


    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Quantum Electron., 40:10 (2010), 925–927  mathnet  crossref  adsnasa  isi  elib
  • Квантовая электроника Quantum Electronics
    Number of views:
    This page:124
    Full text:64
    References:27
    First page:1

     
    Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2022