Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 2009, Volume 39, Number 11, Pages 1028–1032 (Mi qe14159)  

This article is cited in 4 scientific papers (total in 4 papers)

Lasers

Simulation of a longitudinally electron-beam-pumped nanoheterostructure semiconductor laser

D. V. Vysotskiia, N. N. Ëlkina, A. P. Napartovicha, V. I. Kozlovskyb, B. M. Lavrushinb

a State Research Center of Russian Federation "Troitsk Institute for Innovation and Fusion Research"
b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow

Abstract: A three-dimensional numerical model of a vertical-cavity surface-emitting laser (VCSEL) containing a resonance grating of quantum wells (QWs) is developed. The Helmholtz equation for a field and the diffusion equation for a medium, in which an electron beam is the source of charge carriers, aresolved self-consistently, which allowed us to find the longitudinal and radial profiles of the generated field, its frequency, and the threshold pump current. The characteristics of the higher-order modes are calculated against the background of the frozen medium formed by the generated mode. The stability limit of the single-mode regime and the type of a mode at which lasing begins to develop with increasing pump power are found from calculations of the gain balance and losses for higher-order modes. An iteration algorithm is developed for calculating the parameters of a VCSEL with many QWs, the calculation time increasing linearly with the number of QWs. The profiles of the resonator modes and their frequency spectrum are calculated for a cylindrically symmetric VCSEL. The stability limits of single-mode lasing are determined. The results are compared qualitatively with experiments.

Full text: PDF file (179 kB)

English version:
Quantum Electronics, 2009, 39:11, 1028–1032

Bibliographic databases:

PACS: 42.55.Px, 42.60.Da, 41.75.Fr
Received: 19.05.2009
Revised: 08.07.2009

Citation: D. V. Vysotskii, N. N. Ëlkin, A. P. Napartovich, V. I. Kozlovsky, B. M. Lavrushin, “Simulation of a longitudinally electron-beam-pumped nanoheterostructure semiconductor laser”, Kvantovaya Elektronika, 39:11 (2009), 1028–1032 [Quantum Electron., 39:11 (2009), 1028–1032]

Linking options:
  • http://mi.mathnet.ru/eng/qe14159
  • http://mi.mathnet.ru/eng/qe/v39/i11/p1028

    SHARE: VKontakte.ru FaceBook Twitter Mail.ru Livejournal Memori.ru


    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. A. P. Napartovich, N. N. Elkin, D. V. Vysotsky, Opt Quant Electron, 2011  crossref  isi  elib  scopus
    2. Nikolay N. Elkin, Anatoly P. Napartovich, Dmitry V. Vysotsky, Optics Communications, 2011  crossref  isi  scopus
    3. Elkin N.N., Napartovich A.P., Vysotsky D.V., Numerical Methods and Applications, Lecture Notes in Computer Science, 6046, eds. Dimov I., Dimov S., Kolkovska N., Springer-Verlag Berlin, 2011, 404–411  crossref  mathscinet  isi  scopus
    4. Quantum Electron., 41:9 (2011), 769–775  mathnet  crossref  adsnasa  isi  elib
  • Квантовая электроника Quantum Electronics
    Number of views:
    This page:127
    Full text:88
    First page:1

     
    Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2021