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Kvantovaya Elektronika, 2009, Volume 39, Number 8, Pages 723–726 (Mi qe14181)  

This article is cited in 11 scientific papers (total in 11 papers)

Lasers

High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, M. B. Uspenskiy

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: Ternary vertically integrated lasers based on the InGaAs/AlGaAs/GaAs heterostructure grown by the method of MOS hydride epitaxy in a single epitaxial process are studied. The typical slope of the watt—ampere characteristic for a triple laser diode is 2.6 W A-1. The frequency characteristics and temperature dependences of the optical power on the pump power demonstrate good homogeneity of the grown structures. Laser diodes based on the triple laser heterostructure (the stripe contact width is 200 μm and the cavity length is 1 mm) emit 80 W at 0.9 μm in the pulsed regime at the injection current of 40 A.

Full text: PDF file (144 kB)

English version:
Quantum Electronics, 2009, 39:8, 723–726

Bibliographic databases:

PACS: 42.55.Px, 42.60.By, 42.60.Jf, 42.60.Lh
Received: 20.02.2009
Revised: 21.05.2009

Citation: E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, M. B. Uspenskiy, “High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm”, Kvantovaya Elektronika, 39:8 (2009), 723–726 [Quantum Electron., 39:8 (2009), 723–726]

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    Citing articles on Google Scholar: Russian citations, English citations
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    2. Quantum Electron., 40:8 (2010), 682–684  mathnet  crossref  adsnasa  isi  elib
    3. Quantum Electron., 40:10 (2010), 855–857  mathnet  crossref  adsnasa  isi  elib
    4. M. M. Zverev, N. A. Gamov, E. V. Zhdanova, M. A. Ladugin, A. A. Marmalyuk, D. V. Peregoudov, V. B. Studionov, Opt. Spectrosc, 111:2 (2011), 182  crossref  adsnasa  isi  elib  scopus
    5. A. A. Marmalyuk, E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevsky, M. A. Ladugin, E. I. Lebedeva, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, N. A. Pikhtin, I. S. Tarasov, Semiconductors, 45:4 (2011), 519  crossref  adsnasa  isi  elib  scopus
    6. Quantum Electron., 43:9 (2013), 822–823  mathnet  crossref  adsnasa  isi  elib
    7. V. P. Konyaev, A. A. Marmalyuk, M. A. Ladugin, T. A. Bagaev, M. V. Zverkov, Semiconductors, 48:1 (2014), 99  crossref  mathscinet  adsnasa  isi  elib  scopus
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    11. T. A. Bagaev, N. V. Gul'tikov, M. A. Ladugin, A. A. Marmalyuk, Yu. V. Kurnyavko, V. V. Krichevskii, A. M. Morozyuk, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. E. Kazakova, D. N. Romanovich, V. A. Kryuchkov, Quantum Electron., 51:10 (2021), 912–914  mathnet  crossref  isi
  • Квантовая электроника Quantum Electronics
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