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Kvantovaya Elektronika, 2010, Volume 40, Number 10, Pages 855–857 (Mi qe14405)  

This article is cited in 6 scientific papers (total in 6 papers)

Lasers

Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

V. Ya. Aleshkina, T. S. Babushkinab, A. A. Biryukovb, A. A. Dubinova, B. N. Zvonkovb, M. N. Kolesnikovb, V. I. Nekorkinb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Scientific-Research Physicotechnical Institute N. I. Lobachevsky State University of Nizhnii Novgorod

Abstract: A leaky-wave semiconductor laser diode has been developed based on the InGaAs/GaAs/InGaP heterostructure. This design made it possible to obtain a high radiation output in a narrow angular range (about 1°—2°) with an energy of 170 μJ in a laser with a cavity length of 0.8 mm and a stripe contact width of 360 μm, pumped by a single current pulse with an amplitude of 88 A and width of 5 μs.

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English version:
Quantum Electronics, 2010, 40:10, 855–857

Bibliographic databases:

PACS: 42.55.Px, 42.60.Da, 42.60.Jf
Received: 20.07.2010

Citation: V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, V. I. Nekorkin, “Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern”, Kvantovaya Elektronika, 40:10 (2010), 855–857 [Quantum Electron., 40:10 (2010), 855–857]

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  • http://mi.mathnet.ru/eng/qe/v40/i10/p855

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Quantum Electron., 41:9 (2011), 776–781  mathnet  crossref  adsnasa  isi  elib
    2. Quantum Electron., 42:10 (2012), 931–933  mathnet  crossref  isi  elib
    3. Quantum Electron., 44:4 (2014), 286–288  mathnet  crossref  isi  elib
    4. Samartsev I.V., Aleshkin V.Ya., Dikareva N.V., Dubinov A.A., Zvonkov B.N., Kolpakov D.A., Nekorkin S.M., Semiconductors, 49:12 (2015), 1571–1574  crossref  adsnasa  isi  scopus
    5. Kolpakov D.A., Zvonkov B.N., Nekorkin S.M., Dikareva N.V., Aleshkin V.Ya., Dubinov A.A., Semiconductors, 49:11 (2015), 1440–1442  crossref  adsnasa  isi  elib  scopus
    6. Baydus N.V. Nekorkin S.M. Kolpakov D.A. Ershov A.V. Aleshkin V.Ya. Dubinov A.A. Afonenko A.A., Semiconductors, 50:11 (2016), 1488–1492  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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