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Kvantovaya Elektronika, 2012, Volume 42, Number 1, Pages 15–17 (Mi qe14737)  

This article is cited in 11 scientific papers (total in 11 papers)

Lasers

Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

A. A. Marmalyuka, M. A. Ladugina, I. V. Yarotskayaa, V. A. Panarinb, G. T. Mikaelyanb

a "Sigm Plyus" Ltd., Moscow
b Inject Ltd., Saratov

Abstract: Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays and allows the power — current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.

Keywords: laser diode bars, epitaxial heterostructures, mechanical stresses, radiation pattern.

Full text: PDF file (375 kB)
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English version:
Quantum Electronics, 2012, 42:1, 15–17

Bibliographic databases:

PACS: 42.55.Px, 42.60.By, 42.60.Da, 42.60.Jf
Received: 29.09.2011
Revised: 14.10.2011

Citation: A. A. Marmalyuk, M. A. Ladugin, I. V. Yarotskaya, V. A. Panarin, G. T. Mikaelyan, “Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures”, Kvantovaya Elektronika, 42:1 (2012), 15–17 [Quantum Electron., 42:1 (2012), 15–17]

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    2. Quantum Electron., 43:6 (2013), 509–511  mathnet  crossref  adsnasa  isi  elib
    3. D. A. Vinokurov, A. V. Lyutetskiy, D. N. Nikolaev, V. V. Shamakhov, K. V. Bakhvalov, Semiconductors, 47:8 (2013), 1075  crossref  adsnasa  isi  elib  scopus
    4. A.P.. V. Seredin, A. V. Glotov, A. S. Lenshin, I. N. Arsentyev, D. A. Vinokurov, Semiconductors, 48:1 (2014), 21  crossref  adsnasa  isi  elib  scopus
    5. V. V. Shamakhov, D. N. Nikolaev, A. V. Lyutetskiy, K. V. Bakhvalov, M. G. Rastegaeva, Semiconductors, 48:3 (2014), 373  crossref  adsnasa  isi  elib  scopus
    6. P. V. Seredin, Physics Research International, 2014 (2014), 1  crossref  scopus
    7. P. V. Seredin, A. S. Lenjshin, A. V. Glotov, I. N. Atsentjev, I. S. Tarasov, Bull. Russ. Acad. Sci. Phys, 79:2 (2015), 218  crossref  elib  scopus
    8. Seredin P.V., Fedyukin A.V., Arsentyev I.N., Vavilova L.S., Tarasov I.S., Prutskij T., Leiste H., Rinke M., Semiconductors, 50:7 (2016), 853–859  crossref  isi  elib  scopus
    9. Quantum Electron., 47:4 (2017), 291–293  mathnet  crossref  isi  elib
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    11. Ladugin M.A. Yarotskaya V I. Bagaev T.A. Telegin K.Yu. Andreev A.Yu. Zasavitskii I.I. Padalitsa A.A. Marmalyuk A.A., Crystals, 9:6 (2019), 305  crossref  isi
  • Квантовая электроника Quantum Electronics
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