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Kvantovaya Elektronika, 2012, Volume 42, Number 1, Pages 34–38 (Mi qe14750)  

This article is cited in 7 scientific papers (total in 7 papers)


Radiation from a semiconductor target excited by an electron beam in a gas diode

K. V. Berezhnoia, M. B. Bochkarevb, G. L. Danielyanc, A. S. Nasibova, A. G. Reutovab, S. A. Shunailovb, M. I. Yalandinb

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Ekaterinburg
c Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: Radiation from a semiconductor target excited by an electron beam in a gas-filled diode was investigated at different gas (air) pressures. Subnanosecond high-voltage pulses (up to 200 kV) were applied to the pointed cathode of the diode. The targets in the form of a 15 — 20-μm-thick single-crystal CdS film with reflecting coatings forming an optical cavity and 0.7 — 1-mm-thick ZnSe plates were used. As the air pressure increased from 0.1 to 5 Torr, a decrease in the amplitude and duration of laser radiation pulses from the targets was observed. Lasing (λ = 520 nm) of CdS targets terminated at pressures greater than 2.2 Torr. The laser pulse duration varied from 125 to 20 ps. The study of the dynamics of radiation from ZnSe targets (λ = 460 nm) at atmospheric pressure showed that when the gap between the target and the electrodes was 0.2 — 1 mm thick, an intense near-surface glow was observed that consisted of a few pulses with the duration from 20 to 100 ps, caused by runaway electrons. Investigations showed that the runaway electrons may play an essential role in the excitation of semiconductors by subnanosecond high-voltage pulses.

Keywords: semiconductor laser, gas diode, runaway electrons.

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English version:
Quantum Electronics, 2012, 42:1, 34–38

Bibliographic databases:

PACS: 42.55.Px, 41.75.Fr, 52.80.-s
Received: 19.10.2011

Citation: K. V. Berezhnoi, M. B. Bochkarev, G. L. Danielyan, A. S. Nasibov, A. G. Reutova, S. A. Shunailov, M. I. Yalandin, “Radiation from a semiconductor target excited by an electron beam in a gas diode”, Kvantovaya Elektronika, 42:1 (2012), 34–38 [Quantum Electron., 42:1 (2012), 34–38]

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    This publication is cited in the following articles:
    1. K. A. Sharypov, V. G. Shpak, S. A. Shunailov, M. R. Ul'masculov, M. I. Yalandin, Rev. Sci. Instrum, 84:5 (2013), 055110  crossref  adsnasa  isi  elib  scopus
    2. Quantum Electron., 44:3 (2014), 201–205  mathnet  crossref  isi  elib
    3. A. S. Nasibov, K. V. Berezhnoy, M. B. Bochkarev, A. G. Sadykova, S. A. Shunailov, M. I. Yalandin, Bull. Lebedev Phys. Inst., 44:1 (2017), 13–16  crossref  isi  scopus
    4. M. I. Yalandin, M. B. Bochkarev, S. A. Shunailov, A. G. Sadykova, A. S. Nasibov, V. G. Bagramov, K. V. Berezhnoi, B. I. Vasil'ev, Instrum. Exp. Tech., 60:5 (2017), 710–715  crossref  isi  scopus
    5. Nasibov A.S., Bagramov V.G., Berezhnoy K.V., Bochkarev M.B., Sadykova A.G., Tasmagulov I.D., Sharypov K.A., Bull. Lebedev Phys. Inst., 46:1 (2019), 1–4  crossref  isi
    6. Nasibov A.S., Berezhnoi V K., Tasmagulov I.D., Yalandin I M., Sadykova A.G., Ul'maskulov M.R., Shunailov S.A., Instrum. Exp. Tech., 62:6 (2019), 817–822  crossref  isi
    7. M. A. Gashkov, N. M. Zubarev, O. V. Zubareva, G. A. Mesyats, K. A. Sharypov, V. G. Shpak, S. A. Shunailov, M. I. Yalandin, JETP Letters, 113:6 (2021), 370–377  mathnet  crossref  crossref  isi  elib
  • Квантовая электроника Quantum Electronics
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