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Kvantovaya Elektronika, 2013, Volume 43, Number 7, Pages 656–665 (Mi qe15013)  

This article is cited in 7 scientific papers (total in 7 papers)

Fiber optics

Spectral behaviour of bismuth centres in different steps of the FCVD process

A. S. Zlenko, V. M. Mashinsky, L. D. Iskhakova, R. P. Ermakov, S. L. Semenov, V. V. Koltashev

Fiber Optics Research Center of the Russian Academy of Sciences, Moscow

Abstract: The behaviour of bismuth ions in silica glass free of other dopants has been studied in different steps of the furnace chemical vapour deposition (FCVD) process. Porous layers annealed and consolidated in different atmospheres, a bismuth chloride solution in acetone for porous layer impregnation, the resultant glass preform and holey fibres drawn out under various conditions have been characterised by spectroscopic techniques and X-ray diffraction. Active bismuth centres present in the preform and luminescing in the visible and IR spectral regions persist during drawing under reducing conditions, whereas drawing under oxidising conditions eliminates such centres. Annealing under reducing conditions produces absorption bands of IR-emitting bismuth centres (IRBCs) in spectra of fibres drawn out under oxidising conditions and concurrently increases the background loss. Under the annealing conditions of this study (argon atmosphere, Tmax = 1100 °C, 30 min), the IRBC concentration reaches a maximum and then decreases, whereas the background loss increases monotonically.

Keywords: bismuth-related optical centres, porous layer, silica glass, fibre preform, bismuth-doped fibre, FCVD, acetone, bismuth chloride.

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English version:
Quantum Electronics, 2013, 43:7, 656–665

Bibliographic databases:

PACS: 33.20.Kf, 42.55.Wd, 42.81.Bm, 78.60.Lc
Received: 01.10.2012
Revised: 21.12.2012

Citation: A. S. Zlenko, V. M. Mashinsky, L. D. Iskhakova, R. P. Ermakov, S. L. Semenov, V. V. Koltashev, “Spectral behaviour of bismuth centres in different steps of the FCVD process”, Kvantovaya Elektronika, 43:7 (2013), 656–665 [Quantum Electron., 43:7 (2013), 656–665]

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Iskhakova L.D. Milovich F.O. Mashinsky V.M. Zlenko A.S. Borisovsky S.E. Dianov E.M., Microsc. microanal., 22:5 (2016), 987–996  crossref  isi  elib  scopus
    2. Zlenko A.S. Mashinsky V.M. Sokolov V.O. Koltashev V.V. Karatun N.M. Iskhakova L.D. Semjonov S.L. Plotnichenko V.G., J. Opt. Soc. Am. B-Opt. Phys., 33:4 (2016), 675–680  crossref  mathscinet  isi  elib  scopus
    3. Dianov E.M. Firstov S.V. Khopin V.F. Alyshev S.V. Riumkin K.E. Gladyshev A.V. Melkumov M.A. Vechkanov N.N. Guryanov A.N., SPIE LASE (San Francisco, California, United States, Saturday 13 February 2016), SPIE Proceedings, 9728, ed. Ballato J., Spie-Int Soc Optical Engineering, 2016, UNSP 97280U  crossref  isi  scopus
    4. Wei Sh. Luo Ya. Fan D. Xiao G. Chu Yu. Zhang B. Tian Yu. Talal M. Lancry M. Peng G.-D., Opt. Lett., 44:7 (2019), 1872–1875  crossref  isi  scopus
    5. Milovich F.O. Iskhakova L.D. Presniakov M.Yu. Vasiliev A.L. Bondarenko V.I. Sverchkov S.E. Galagan B.I., J. Non-Cryst. Solids, 510 (2019), 166–171  crossref  isi  scopus
    6. Khegai A. Firstov S. Riumkin K. Alyshev S. Afanasiev F. Khopin V. Guryanov A. Melkumov M., 2019 Asia Communications and Photonics Conference (Acp), Asia Communications and Photonics Conference and Exhibition, IEEE, 2019  isi
    7. Khegai A. Firstov S. Riumkin K. Alyshev S. Afanasiev F. Lobanov A. Guryanov A. Melkumov M., Opt. Express, 28:20 (2020), 29335–29344  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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