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Kvantovaya Elektronika, 2013, Volume 43, Number 12, Pages 1094–1098 (Mi qe15241)  

Lasers

Numerical simulation of the main characteristics of a high-pressure DF–CO2 laser for amplification of picosecond laser pulses

V. Ya. Agroskin, B. G. Bravy, G. K. Vasil'ev, S. A. Kashtanov, E. F. Makarov, S. A. Sotnichenko, Yu. A. Chernyshev

Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region

Abstract: The gain characteristics of the medium of a pulsed DF–CO2 laser in the ten-micron region at the working gas pressures from 1 to 2.5 atm, which were experimentally determined in [4], are numerically simulated using a scheme that includes the main chemical and relaxation processes. It is shown that the chosen scheme of processes makes it possible (i) to numerically describe the experimental data on the temporal behaviour of gains; (ii) to explain the reason for early degradation of gains (at the degree of D2 transformation of about 20%); (iii) from comparison of experimental and calculated temporal gain profiles, to determine the degree of photodissociation of F2 molecules, which is an important parameter determining the operation of pulsed chemical DF – CO2 lasers; and (iv) to predict the gain characteristics of working mixtures depending on their composition and pressure and on the initiation parameters. The predicted gains in the mixtures of the optimal composition at a pressure of 2.5 atm, a degree of dissociation of F2 molecules per flash ~1%, and a flash duration at half-width of ~3 ms are ~7 m-1.

Keywords: DF – CO2 laser, gain, simulation.

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English version:
Quantum Electronics, 2013, 43:12, 1094–1098

Bibliographic databases:

Document Type: Article
PACS: 42.55.Lt, 42.60.Lh
Received: 24.05.2013
Revised: 12.07.2013

Citation: V. Ya. Agroskin, B. G. Bravy, G. K. Vasil'ev, S. A. Kashtanov, E. F. Makarov, S. A. Sotnichenko, Yu. A. Chernyshev, “Numerical simulation of the main characteristics of a high-pressure DF–CO2 laser for amplification of picosecond laser pulses”, Kvantovaya Elektronika, 43:12 (2013), 1094–1098 [Quantum Electron., 43:12 (2013), 1094–1098]

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  • Квантовая электроника Quantum Electronics
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