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Kvantovaya Elektronika, 2013, Volume 43, Number 12, Pages 1091–1093 (Mi qe15331)  

This article is cited in 1 scientific paper (total in 1 paper)

Letters

Nanostructuring of single-crystal silicon carbide by picosecond UV laser radiation

E. V. Barminaab, A. A. Serkovab, G. A. Shafeevab

a Wave Research Center of Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
b Ltd. Energomashtehnika, Moscow

Abstract: Surface nanostructures are produced on single-crystal 4H-SiC by laser ablation in water using a Nd : YAG laser (355-nm wavelength, 10-ps pulse duration) as a radiation source. The morphology of the nanostructured surface and the nanostructure size distribution are examined in relation to the energy density of the incident laser beam. The potential of the described process for improving the luminosity of light-emitting diodes on silicon carbide substrates is discussed.

Keywords: silicon carbide, light-emitting diodes, GaN, lasers, ablation, nanostructures.

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English version:
Quantum Electronics, 2013, 43:12, 1091–1093

Bibliographic databases:

Document Type: Article
PACS: 79.20.Eb, 81.05.U-, 81.07.-b, 42.25.Gy
Received: 24.10.2013

Citation: E. V. Barmina, A. A. Serkov, G. A. Shafeev, “Nanostructuring of single-crystal silicon carbide by picosecond UV laser radiation”, Kvantovaya Elektronika, 43:12 (2013), 1091–1093 [Quantum Electron., 43:12 (2013), 1091–1093]

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  • http://mi.mathnet.ru/eng/qe15331
  • http://mi.mathnet.ru/eng/qe/v43/i12/p1091

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Barmina E.V., Skoulas E., Stratakis E., Shafeev G.A., “Laser Nano-Structuring of Pre-Structured Substrates”, J. Laser Micro Nanoeng., 13:1 (2018), 6–9  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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