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Kvantovaya Elektronika, 2014, Volume 44, Number 6, Pages 530–534 (Mi qe15974)  

This article is cited in 9 scientific papers (total in 9 papers)

Extreme light fields and their applications

Generation of negative pressures and spallation phenomena in diamond exposed to a picosecond laser pulse

S. A. Abrosimova, A. P. Bazhulina, A. P. Bol'shakova, V. I. Konova, I. K. Krasyuka, P. P. Pashinina, V. G. Ral'chenkoa, A. Yu. Semenova, D. N. Sovyka, I. A. Stuchebryukhova, V. E. Fortovb, K. V. Khishchenkob, A. A. Khomicha

a A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
b Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow

Abstract: The spallation phenomena in poly- and single-crystal synthetic diamonds have been experimentally investigated. A shockwave impact on a target was implemented using a 70-ps laser pulse in the Kamerton-T facility. The ablation pressure of 0.66 TPa on the front target surface was formed by pulsed radiation of a neodymium phosphate glass laser (second harmonic λ = 0.527 mm, pulse energy 2.5 J) with an intensity as high as 2 × 1013 W cm-2. The maximum diamond spall strength σ* ≈ 16.5 GPa is found to be 24% of the theoretical ultimate strength. Raman scattering data indicate that a small amount of crystalline diamond in the spallation region on the rear side of the target is graphitised.

Keywords: laser radiation, picosecond duration, ablation pressure, shock wave, negative pressure, spallation phenomenon, strain rate, ultimate strength, numerical simulation, synthetic diamond.
Author to whom correspondence should be addressed

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English version:
Quantum Electronics, 2014, 44:6, 530–534

Bibliographic databases:

PACS: 79.20.Ds, 52.38.Mf, 81.05.Uw
Received: 03.03.2014
Revised: 12.03.2014

Citation: S. A. Abrosimov, A. P. Bazhulin, A. P. Bol'shakov, V. I. Konov, I. K. Krasyuk, P. P. Pashinin, V. G. Ral'chenko, A. Yu. Semenov, D. N. Sovyk, I. A. Stuchebryukhov, V. E. Fortov, K. V. Khishchenko, A. A. Khomich, “Generation of negative pressures and spallation phenomena in diamond exposed to a picosecond laser pulse”, Kvantovaya Elektronika, 44:6 (2014), 530–534 [Quantum Electron., 44:6 (2014), 530–534]

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. S. A. Abrosimov, A. P. Bazhulin, A. P. Bolshakov, V. I. Konov, I. K. Krasiuk, J Appl Mech Tech Phy, 56:1 (2015), 143  crossref  adsnasa  isi  elib  scopus
    2. R. S. Belikov, I. K. Krasyuk, T. Rinecker, A. Yu. Semenov, O. N. Rosmej, I. A. Stuchebryukhov, M. Tomut, K. V. Khishchenko, A. Schoenlein, Quantum Electron., 45:5 (2015), 421–425  mathnet  crossref  isi  elib  elib
    3. Krasyuk I.K., Semenov A.Yu., Stuchebryukhov I.A., Belikov R.S., Khishchenko K.V., Rosmej O.N., Rienecker T., Schoenlein A., Tomut M., Xxx International Conference on Interaction of Intense Energy Fluxes With Matter (Elbrus 2015), Journal of Physics Conference Series, 653, IOP Publishing Ltd, 2015, 012002  crossref  isi  scopus
    4. Krasyuk I.K., Pashinin P.P., Semenov A.Yu., Khishchenko K.V., Fortov V.E., Laser Phys., 26:9, SI (2016), 094001  crossref  isi  elib  scopus
    5. M. Wu, B. Guo, Q. Zhao, Appl. Phys. A-Mater. Sci. Process., 124:2 (2018), 170  crossref  isi  scopus
    6. M. Wu, B. Guo, Q. Zhao, R. Fan, Zh. Dong, X. Yu, Opt. Lasers Eng., 105 (2018), 60–67  crossref  isi  scopus
    7. J. K. Wicks, R. F. Smith, D. E. Fratanduono, F. Coppari, R. G. Kraus, M. G. Newman, J. R. Rygg, J. H. Eggert, T. S. Duffy, Sci. Adv., 4:4 (2018), eaao5864  crossref  isi  scopus
    8. M. Wu, B. Guo, Q. Zhao, P. He, Zh. Zeng, J. Zang, Opt. Laser Technol., 106 (2018), 34–39  crossref  isi
    9. V. S. Dozhdikov, A. Yu. Basharin, P. R. Levashov, XXXII International Conference on Interaction of Intense Energy Fluxes With Matter (Elbrus 2017), Journal of Physics Conference Series, 946, IOP Publishing Ltd, 2018, UNSP 012086  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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