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Kvantovaya Elektronika, 2015, Volume 45, Number 7, Pages 607–609 (Mi qe16204)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

High power, 1060-nm diode laser with an asymmetric hetero-waveguide

T. Lia*, E. Haob, Yu. Zhanga

a National Key Lab. On High Power Diode Laser, Changchun University of Science and Technology, Changchun, 130033, China
b College of Physics, Jilin University, Changchun, 130021, China

Abstract: By introducing an asymmetric hetero-waveguide into the epitaxial structure of a diode laser, a 6.21-W output is achieved at a wavelength of 1060 nm. A different design in p- and n-confinement, based on optimisation of energy bands, is used to reduce voltage loss and meet the requirement of high power and high wall-plug efficiency. A 1060-nm diode laser with a single quantum well and asymmetric hetero-structure waveguide is fabricated and analysed. Measurement results show that the asymmetric hetero-structure waveguide can be efficiently used for reducing voltage loss and improving the confinement of injection carriers and wall-plug efficiency.

Keywords: high power, diode laser, hetero-waveguide.
* Author to whom correspondence should be addressed

Full text: PDF file (566 kB)
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English version:
Quantum Electronics, 2015, 45:7, 607–609

Bibliographic databases:

PACS: 42.55.Px, 85.35.Be, 42.60.Jf
Received: 24.09.2014
Revised: 24.10.2014

Citation: T. Li, E. Hao, Yu. Zhang, “High power, 1060-nm diode laser with an asymmetric hetero-waveguide”, Kvantovaya Elektronika, 45:7 (2015), 607–609 [Quantum Electron., 45:7 (2015), 607–609]

Linking options:
  • http://mi.mathnet.ru/eng/qe16204
  • http://mi.mathnet.ru/eng/qe/v45/i7/p607

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Zh. Qiao, X. Li, H. Wang, T. Li, X. Gao, Y. Qu, B. Bo, Ch. Liu, Semicond. Sci. Technol., 34:5 (2019), 055013  crossref  isi
  • Квантовая электроника Quantum Electronics
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