Lasers, active media
Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser
M. V. Bogdanovicha, V. P. Duraevb, V. S. Kalinova, O. E. Kostika, K. I. Lantsova, K. V. Lepchenkova, V. V. Mashkoa, A. G. Ryabtseva, G. I. Ryabtseva*, L. L. Teplyashina
a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
b "Nolatech" Joint-Stock Company, Moscow
A Q-switched Nd : YAG laser with a high-power transverse diode pumping and injection of seed radiation generated by a single-frequency semiconductor laser is described. The threshold seed radiation power at which the Q-switched Nd : YAG switches to the single-frequency mode is 0.44 mW (radiation intensity 5.6 × 10-2 W cm-2). With increasing injection power, the spectral and power characteristics of the Q-switched laser almost do not change at a constant excitation of its active medium. The spectral linewidth of the Q-switched Nd : YAG laser with injection from a TLD-1060-14BF single-frequency semiconductor laser module does not exceed 90 MHz (wavelength 1064 nm).
solid-state laser, diode pumping, semiconductor laser module, injection of narrowband radiation.
* Author to whom correspondence should be addressed
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Quantum Electronics, 2016, 46:10, 870–872
M. V. Bogdanovich, V. P. Duraev, V. S. Kalinov, O. E. Kostik, K. I. Lantsov, K. V. Lepchenkov, V. V. Mashko, A. G. Ryabtsev, G. I. Ryabtsev, L. L. Teplyashin, “Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser”, Kvantovaya Elektronika, 46:10 (2016), 870–872 [Quantum Electron., 46:10 (2016), 870–872]
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