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Kvantovaya Elektronika, 2016, Volume 46, Number 10, Pages 870–872 (Mi qe16481)  

Lasers, active media

Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser

M. V. Bogdanovicha, V. P. Duraevb, V. S. Kalinova, O. E. Kostika, K. I. Lantsova, K. V. Lepchenkova, V. V. Mashkoa, A. G. Ryabtseva, G. I. Ryabtseva*, L. L. Teplyashina

a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
b "Nolatech" Joint-Stock Company, Moscow

Abstract: A Q-switched Nd : YAG laser with a high-power transverse diode pumping and injection of seed radiation generated by a single-frequency semiconductor laser is described. The threshold seed radiation power at which the Q-switched Nd : YAG switches to the single-frequency mode is 0.44 mW (radiation intensity 5.6 × 10-2 W cm-2). With increasing injection power, the spectral and power characteristics of the Q-switched laser almost do not change at a constant excitation of its active medium. The spectral linewidth of the Q-switched Nd : YAG laser with injection from a TLD-1060-14BF single-frequency semiconductor laser module does not exceed 90 MHz (wavelength 1064 nm).

Keywords: solid-state laser, diode pumping, semiconductor laser module, injection of narrowband radiation.
* Author to whom correspondence should be addressed

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English version:
Quantum Electronics, 2016, 46:10, 870–872

Bibliographic databases:

Received: 22.06.2016

Citation: M. V. Bogdanovich, V. P. Duraev, V. S. Kalinov, O. E. Kostik, K. I. Lantsov, K. V. Lepchenkov, V. V. Mashko, A. G. Ryabtsev, G. I. Ryabtsev, L. L. Teplyashin, “Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser”, Kvantovaya Elektronika, 46:10 (2016), 870–872 [Quantum Electron., 46:10 (2016), 870–872]

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  • Квантовая электроника Quantum Electronics
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