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Kvantovaya Elektronika, 2017, Volume 47, Number 4, Pages 291–293 (Mi qe16600)  

This article is cited in 5 scientific papers (total in 5 papers)

Letters

Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

M. A. Ladugina*, A. A. Marmalyukab, A. A. Padalitsaa, T. A. Bagaeva, A. Yu. Andreeva, K. Yu. Telegina, A. V. Lobintsova, E. I. Davydovaa, S. M. Sapozhnikova, A. I. Danilova, A. V. Podkopaeva, E. B. Ivanovaa, V. A. Simakova

a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b Moscow Engineering Physics Institute (National Nuclear Research University)

Abstract: The results of the development and fabrication of laser diode bars (λ = 800 – 810 nm) based on AlGaAs/GaAs quantumwell heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.

Keywords: laser diode bars, efficiency, quantum-well heterostructures, MOCVD, AlGaAs/GaAs.

Funding Agency Grant Number
Ministry of Education and Science of the Russian Federation

* Author to whom correspondence should be addressed

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English version:
Quantum Electronics, 2017, 47:4, 291–293

Bibliographic databases:

Received: 17.03.2017

Citation: M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, T. A. Bagaev, A. Yu. Andreev, K. Yu. Telegin, A. V. Lobintsov, E. I. Davydova, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, E. B. Ivanova, V. A. Simakov, “Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%”, Kvantovaya Elektronika, 47:4 (2017), 291–293 [Quantum Electron., 47:4 (2017), 291–293]

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  • http://mi.mathnet.ru/eng/qe/v47/i4/p291

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Quantum Electron., 47:8 (2017), 693–695  mathnet  crossref  isi  elib
    2. Quantum Electron., 49:5 (2019), 488–492  mathnet  crossref  isi  elib
    3. Quantum Electron., 49:6 (2019), 529–534  mathnet  crossref  isi  elib
    4. Quantum Electron., 49:10 (2019), 905–908  mathnet  crossref  isi  elib
    5. Quantum Electron., 50:5 (2020), 489–492  mathnet  crossref  isi  elib
  • Квантовая электроника Quantum Electronics
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