Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
M. A. Ladugina, A. A. Marmalyukab, A. A. Padalitsaa, K. Yu. Telegina, A. V. Lobintsova, S. M. Sapozhnikova, A. I. Danilova, A. V. Podkopaeva, V. A. Simakova
a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b Moscow Engineering Physics Institute (National Nuclear Research University)
The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.
laser diode arrays, efficiency, quantum-well heterostructures, MOCVD, AlGaAs/GaAs.
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Quantum Electronics, 2017, 47:8, 693–695
M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, K. Yu. Telegin, A. V. Lobintsov, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, V. A. Simakov, “Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%”, Kvantovaya Elektronika, 47:8 (2017), 693–695 [Quantum Electron., 47:8 (2017), 693–695]
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