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Kvantovaya Elektronika, 2017, Volume 47, Number 8, Pages 693–695 (Mi qe16666)  

Lasers

Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

M. A. Ladugina, A. A. Marmalyukab, A. A. Padalitsaa, K. Yu. Telegina, A. V. Lobintsova, S. M. Sapozhnikova, A. I. Danilova, A. V. Podkopaeva, V. A. Simakova

a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b Moscow Engineering Physics Institute (National Nuclear Research University)

Abstract: The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

Keywords: laser diode arrays, efficiency, quantum-well heterostructures, MOCVD, AlGaAs/GaAs.

Funding Agency Grant Number
Ministry of Education and Science of the Russian Federation

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English version:
Quantum Electronics, 2017, 47:8, 693–695

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Received: 31.05.2017

Citation: M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, K. Yu. Telegin, A. V. Lobintsov, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, V. A. Simakov, “Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%”, Kvantovaya Elektronika, 47:8 (2017), 693–695 [Quantum Electron., 47:8 (2017), 693–695]

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  • Квантовая электроника Quantum Electronics
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