Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 2017, Volume 47, Number 9, Pages 867–870 (Mi qe16672)  

Photoluminescen ce of excitons

Photoluminescence dynamics of direct and indirect excitons in CdTe/ZnTe superlattices with quantum dot layers

M. V. Kochiev, I. V. Kucherenko*, E. V. Utsyna

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: Photoluminescence kinetics is measured for spatially direct and indirect excitons in CdTe quantum dots excited by second harmonic radiation pulses of a picosecond Ti : sapphire laser. The width of a ZnTe barrier layer varied in the range of 2–12 monolayers (MLs). Since the photoluminescence decay curves are not described by a single exponential dependence, two components are analysed–fast and slow, which can be approximated by exponential functions. It is shown that in the samples with a barrier layer width of 12 and 4 MLs, the decay times for the fast component of a direct exciton and an indirect exciton are 0.4 ns and 3 μs, respectively. The long-term component is observed in both spectra. For a direct exciton, the photoluminescence decay time is 6 ns, and for an indirect exciton it is 22 μs. It is found that the recombination times for direct and indirect excitons in a sample with the barrier layer width of 2 MLs are close: in both cases the decay time for the fast component and slow component is 2 and 80 ns, respectively. Taking into account the tensile strain of the ZnTe layer and origin of the quantum well for light holes in this layer it is assumed that electrons in CdTe quantum dots interact with light holes in a ZnTe layer and generate a quasi-direct exciton because electron wave functions penetrate into the barrier.

Keywords: photoluminescence, exciton, direct exciton, indirect exciton, wetting layer, quantum dot, recombination time of an exciton, CdTe/ZnTe.
* Author to whom correspondence should be addressed

Full text: PDF file (575 kB)
References: PDF file   HTML file

English version:
Quantum Electronics, 2017, 47:9, 867–870

Bibliographic databases:

Received: 17.04.2017
Revised: 13.07.2017

Citation: M. V. Kochiev, I. V. Kucherenko, E. V. Utsyna, “Photoluminescence dynamics of direct and indirect excitons in CdTe/ZnTe superlattices with quantum dot layers”, Kvantovaya Elektronika, 47:9 (2017), 867–870 [Quantum Electron., 47:9 (2017), 867–870]

Linking options:
  • http://mi.mathnet.ru/eng/qe16672
  • http://mi.mathnet.ru/eng/qe/v47/i9/p867

    SHARE: VKontakte.ru FaceBook Twitter Mail.ru Livejournal Memori.ru


    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles
  • Квантовая электроника Quantum Electronics
    Number of views:
    This page:106
    Full text:19
    References:14
    First page:8

     
    Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2021