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Kvantovaya Elektronika, 2018, Volume 48, Number 11, Pages 989–992 (Mi qe16934)  

This article is cited in 7 scientific papers (total in 7 papers)

Letters

25 Gb s-1 data transmission using a bismuth-doped fibre amplifier with a gain peak shifted to 1300 nm

M. A. Mel'kumova, V. Mikhailovb, A. M. Khegaia, K. E. Riumkina, S. V. Firstova, F. V. Afanas'evc, A. N. Gur'yanovc, M. F. Yanb, Ya. Sunb, J. Luob, G. S. Pucb, S. D. Shenkb, R. S. Windelerb, P. S. Westbrookb, R. L. Lingleb, D. J. DiGiovannib, E. M. Dianova

a Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
b OFS Laboratories, Somerset, USA
c Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod

Abstract: Using a bismuth-doped aluminosilicate fibre laser tunable in the range 1130–1210 nm, we have examined the effect of pump wavelength on the gain spectrum of bismuth-doped phosphosilicate fibres in the range 1220–1400 nm. At a pump wavelength of 1195 nm, we obtained a peak gain wavelength of 1300 nm, which is near the centre of the standard range for O-band transmission (1270–1320 nm) in fibre-optic communication links, in particular between data centres. Using a bismuth-doped phosphosilicate fibre amplifier pumped at 1195 nm, we have demonstrated that the transmission distance for a signal from a semiconductor laser diode directly modulated at 25 Gb s-1 [on – off keying (OOK) modulation] can be increased for G.652 fibre from the standard 10 to 80 km or even more.

Keywords: bismuth-doped fibre amplifier, data transmission, tunable laser, bismuth-doped fibre laser, gain spectrum.

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English version:
Quantum Electronics, 2018, 48:11, 989–992

Bibliographic databases:

Received: 25.10.2018

Citation: M. A. Mel'kumov, V. Mikhailov, A. M. Khegai, K. E. Riumkin, S. V. Firstov, F. V. Afanas'ev, A. N. Gur'yanov, M. F. Yan, Ya. Sun, J. Luo, G. S. Puc, S. D. Shenk, R. S. Windeler, P. S. Westbrook, R. L. Lingle, D. J. DiGiovanni, E. M. Dianov, “25 Gb s-1 data transmission using a bismuth-doped fibre amplifier with a gain peak shifted to 1300 nm”, Kvantovaya Elektronika, 48:11 (2018), 989–992 [Quantum Electron., 48:11 (2018), 989–992]

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  • http://mi.mathnet.ru/eng/qe/v48/i11/p989

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. A. Khegai, S. Firstov, K. Riumkin, F. Afanasiev, M. Melkumov, IEEE Photonics Technol. Lett., 31:12 (2019), 963–966  crossref  isi
    2. N. K. Thipparapu, Y. Wang, S. Wang, A. A. Umnikov, P. Barua, J. K. Sahu, Opt. Mater. Express, 9:6 (2019), 2446–2465  crossref  isi
    3. A. Khegai, F. Afanasiev, Ya. Ososkov, K. Riumkin, V. Khopin, A. Lobanov, M. Yashkov, E. Firstova, A. Abramov, M. Melkumov, A. Guryanov, S. Firstov, J. Lightwave Technol., 38:21 (2020), 6114–6120  crossref  isi
    4. Ya. Hong, K. R. H. Bottrill, N. Taengnoi, N. K. Thipparapu, Yu. Wang, A. A. Umnikov, J. K. Sahu, D. J. Richardson, P. Petropoulos, J. Lightwave Technol., 38:8 (2020), 2278–2284  crossref  isi
    5. S. Firstov, A. Khegai, K. Riumkin, Ya. Ososkov, E. Firstova, M. Melkumov, S. Alyshev, E. Evlampieva, L. Iskhakova, A. Lobanov, V. Khopin, A. Abramov, M. Yashkov, A. Guryanov, Opt. Lett., 45:9 (2020), 2576–2579  crossref  isi  scopus
    6. V S. Firstov , A. M. Khegai, V A. Kharakhordin , V S. Alyshev , E. G. Firstova, Ya. J. Ososkov, M. A. Melkumov, L. D. Iskhakova, E. B. Evlampieva, A. S. Lobanov, V M. Yashkov , A. N. Guryanov, Sci Rep, 10:1 (2020)  crossref  isi
    7. Quantum Electron., 51:7 (2021), 630–634  mathnet  crossref  isi  elib
  • Квантовая электроника Quantum Electronics
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