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Kvantovaya Elektronika, 2019, Volume 49, Number 2, Pages 133–140 (Mi qe16985)  

This article is cited in 3 scientific papers (total in 3 papers)

Interaction of laser radiation with matter. Laser plasma

Thermoplasmonic laser-induced backside wet etching of sapphire

M. Yu. Tsvetkova*, N. V. Minaeva, A. A. Akovantsevaa, P. S. Timashevbac, A. E. Muslimovd, V. M. Kanevskiid

a Federal Research Centre 'Crystallography and Photonics', Russian Academy of Sciences, Institute of Photonic Technologies, Moscow, Troitsk
b Institute for Regenerative Medicine, I. M. Sechenov First Moscow State Medical University
c N. N. Semenov Institute of Chemical Physics, Russian Academy of Sciences, Moscow
d FSRC "Crystallography and Photonics" RAS, Moscow

Abstract: The technology of thermoplasmonic laser-induced backside wet etching is proposed to microstructure such solid and difficult-to-process materials as sapphire. In this technology, the laser absorbing medium is silver nanoparticles obtained from a precursor (AgNO3) and providing significant laser radiation absorption due to the presence of plasmonic absorption with the formation of a substantially localised region with extremely high temperatures and pressures. This approach makes it possible to process sapphire both in the 'gentle' regime with the formation of nanometre structures and in the 'strong' regime to allow for the formation of 'deep' structures with etching rates up to several micrometers per pulse and high aspect ratio. The possibility of formation of periodic structures in sapphire in the above-threshold regime is shown.

Keywords: laser-induced backside wet etching, sapphire, thermoplasmonics, microstructuring, laser-induced periodic structures.

Funding Agency Grant Number
Russian Foundation for Basic Research 18-02-00420 А
18-29-06056 МК
16-29-11763 офи-м
Russian Science Foundation 14-33-00017-П
Russian Academy of Sciences - Federal Agency for Scientific Organizations 007-ГЗ/Ч3363/26

* Author to whom correspondence should be addressed

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English version:
Quantum Electronics, 2019, 49:2, 133–140

Bibliographic databases:

Received: 02.10.2018
Revised: 19.10.2018

Citation: M. Yu. Tsvetkov, N. V. Minaev, A. A. Akovantseva, P. S. Timashev, A. E. Muslimov, V. M. Kanevskii, “Thermoplasmonic laser-induced backside wet etching of sapphire”, Kvantovaya Elektronika, 49:2 (2019), 133–140 [Quantum Electron., 49:2 (2019), 133–140]

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  • http://mi.mathnet.ru/eng/qe16985
  • http://mi.mathnet.ru/eng/qe/v49/i2/p133

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. A. G. Shubny, E. O. Epifanov, V N. Minaev , M. Yu. Tsvetkov, A. P. Sviridov, S. A. Minaeva, I V. Yusupov, Laser Phys. Lett., 16:8 (2019), 086001  crossref  isi
    2. M. Zhigalina, D. N. Khmelenin, V A. Atanova , V N. Minaev , A. P. Sviridov, M. Yu. Tsvetkov, Plasmonics, 15:3 (2020), 599–608  crossref  isi  scopus
    3. Zhigalina O.M. Khmelenin D.N. Atanova V A. Sviridov A.P. Tsvetkov M.Yu., Appl. Surf. Sci., 536 (2021), 147837  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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