Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis
V. S. Golovin*, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev
Ioffe Institute, St. Petersburg
Longitudinal spatial hole burning (LSHB) in high-power semiconductor lasers is analysed by numerically solving one-dimensional (1D) rate equations. Calculations are performed for GaAsbased lasers operating at a wavelength of 1.06 μm. It is shown that the LSHB-induced decrease in output power can be accounted for by two mechanisms: build-up of spontaneous recombination and decrease in slope efficiency, equivalent to a rise in internal optical loss. We analyse the influence of different laser chip parameters on the magnitude of the LSHB effect. In particular, it is shown that to suppress LSHB it is preferable to increase the optical confinement factor Γ. We examine the relationship between LSHB and other mechanisms capable of reducing the output power.
semiconductor laser, longitudinal spatial hole burning, rate equations, internal optical loss, numerical analysis.
* Author to whom correspondence should be addressed
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Quantum Electronics, 2020, 50:2, 147–152
V. S. Golovin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis”, Kvantovaya Elektronika, 50:2 (2020), 147–152 [Quantum Electron., 50:2 (2020), 147–152]
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