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Kvantovaya Elektronika, 2020, Volume 50, Number 5, Pages 496–501 (Mi qe17244)  

Nonlinear optical phenomena

Second-harmonic generation in zinc blende crystals under combined action of femtosecond optical and strong terahertz fields

S. B. Bodrov, A. I. Korytin, Yu. A. Sergeev*, A. N. Stepanov

Federal Research Center The Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod

Abstract: The influence of a short intense (with an electric field strength up to 250 kV cm-1) terahertz (THz) pulse on the generation of second harmonic (SH) of Ti : sapphire laser radiation in crystals of zinc blende type (InAs and GaAs), characterised by nonzero bulk quadratic susceptibility, is investigated. It is experimentally shown for InAs(100) that, in the case of s-polarised first and second harmonics, an application of s-polarised THz field changes significantly the SH signal. The THz field-induced azimuthal dependence of the SH signal is in good agreement with the results of theoretical calculation within a phenomenological approach. The dependence of the SH signal on the delay time between the optical and THz pulses is investigated. This dependence for the GaAs crystal repeats the envelope of the THz pulse intensity, whereas in the case of InAs crystal there is a significant discrepancy, caused by the nonlinear dynamics of strong THz field in InAs.

Keywords: second harmonic, femtosecond laser pulses, THz field, zinc blende.

Funding Agency Grant Number
Russian Foundation for Basic Research 18-42-520070
Ministry of Education and Science of the Russian Federation 0035-2018-0023

* Author to whom correspondence should be addressed

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English version:
Quantum Electronics, 2020, 50:5, 496–501

Bibliographic databases:

Received: 11.11.2019
Revised: 31.01.2020

Citation: S. B. Bodrov, A. I. Korytin, Yu. A. Sergeev, A. N. Stepanov, “Second-harmonic generation in zinc blende crystals under combined action of femtosecond optical and strong terahertz fields”, Kvantovaya Elektronika, 50:5 (2020), 496–501 [Quantum Electron., 50:5 (2020), 496–501]

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