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Kvantovaya Elektronika, 2000, Volume 30, Number 10, Pages 878–880 (Mi qe1826)  

Lasers

Optical loss in strained quantum-well semiconductor ridge lasers

A. P. Bogatova, A. E. Boltasevab, A. E. Drakina, V. P. Konyaevc

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
c Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow

Abstract: The results of measurements of optical loss in semiconductor ridge lasers are presented. The InGaAs/AlGaAs/GaAs single-quantum-well semiconductor lasers are studied in the spectral range from 1019 to 1042 nm, which corresponds to the long wavelength wing of the mode gain curve. It is shown that the dominant mechanism of optical loss appears to be light scattering by optical inhomogeneities of the laser waveguide, while the free-carrier absorption is negligible in the lasers studied.

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English version:
Quantum Electronics, 2000, 30:10, 878–880

Bibliographic databases:

PACS: 42.55.Px, 42.60.Lh
Received: 23.05.2000

Citation: A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, V. P. Konyaev, “Optical loss in strained quantum-well semiconductor ridge lasers”, Kvantovaya Elektronika, 30:10 (2000), 878–880 [Quantum Electron., 30:10 (2000), 878–880]

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  • http://mi.mathnet.ru/eng/qe/v30/i10/p878

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  • Квантовая электроника Quantum Electronics
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