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Kvantovaya Elektronika, 2001, Volume 31, Number 7, Pages 565–566 (Mi qe2004)  

This article is cited in 2 scientific papers (total in 2 papers)

Letters

Structural transitions in GaAs during irradiation by a 100-fs laser pulse

S. I. Kudryashov, V. I. Emel'yanov

Faculty of Physics, Lomonosov Moscow State University

Abstract: It is shown experimentally for the first time that the pumping of a GaAs sample by a 100-fs laser pulse causes plasma-induced bandgap collapse and 'cold' melting of the material during the pulse.

Full text: PDF file (159 kB)

English version:
Quantum Electronics, 2001, 31:7, 565–566

Bibliographic databases:

PACS: 78.40.Fy, 78.47.+p
Received: 20.03.2001

Citation: S. I. Kudryashov, V. I. Emel'yanov, “Structural transitions in GaAs during irradiation by a 100-fs laser pulse”, Kvantovaya Elektronika, 31:7 (2001), 565–566 [Quantum Electron., 31:7 (2001), 565–566]

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  • http://mi.mathnet.ru/eng/qe/v31/i7/p565

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Biscan M., Kregar Z., Krstulovic N., Milosevic S., Opt. Commun., 315 (2014), 37–41  crossref  isi  elib  scopus
    2. Zakharova I.G. Kalinovich A.A. Trofimov V.A., Opt. Spectrosc., 124:4 (2018), 516–520  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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