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Kvantovaya Elektronika, 2001, Volume 31, Number 9, Pages 817–820 (Mi qe2052)  

This article is cited in 6 scientific papers (total in 6 papers)

Nonlinear optical phenomena

Nonlinear absorption in silicon nanocrystals

S. B. Korovina, A. N. Orlova, A. M. Prokhorova, V. I. Pustovoia, M. Konstantakib, S. Courisb, E. Koudoumasb

a Natural Sciences Center at General Physics Institute of RAS, Moscow
b Foundation for Research and Technology-Hellas (IESL-FORTH), Institute of Electronic Structure and Lasers, Greece

Abstract: The nonlinear absorption of light in silicon nanocrystals suspended in glycerol is studied by the Z-scan method. The experimental data are used for calculating the nonlinear absorption coefficient βSi-gl for silicon nanocrystals in glycerol (with a volume filling factor f = 2×10-4), and the coefficient βSi for pure silicon with a hypothetical volume filling factor f ≈ 1. For the laser radiation wavelength λ = 497 nm and the pulse duration τ = 0.5 ns, these coefficients are βSi-gl = 1.2×10-8 cm W-1 and βSi = 7.36×10-5 cm W-1, while the corresponding values for λ = 532 nm and τ = 10 ns are βSi-gl = 5.36×10-5 cm W-1 and βSi = 0.25 cm W-1. Experiments with 540-nm, 20-ps laser pulses performed for two different filling factors equal to 2×10-4 and 3×10-3 gave nonlinear absorption coefficients βSi-gl = 2×10-7 and 3.6×10-6 cm W-1, respectively. Optical absorption and Raman scattering spectra of silicon nanocrystals are also studied. A theoretical analysis of the experimental results shows that optical absorption can be related to the localisation of photoexcited carriers in the conduction band. The localisation is caused by the action of strong static electric fields on an electron in a nanoparticle.

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English version:
Quantum Electronics, 2001, 31:9, 817–820

Bibliographic databases:

PACS: 78.67.Bf, 42.70.Nq, 42.25.Bs
Received: 16.03.2000
Revised: 02.07.2001

Citation: S. B. Korovin, A. N. Orlov, A. M. Prokhorov, V. I. Pustovoi, M. Konstantaki, S. Couris, E. Koudoumas, “Nonlinear absorption in silicon nanocrystals”, Kvantovaya Elektronika, 31:9 (2001), 817–820 [Quantum Electron., 31:9 (2001), 817–820]

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    This publication is cited in the following articles:
    1. Karimzadeh R., Mansour N., Optik, 124:24 (2013), 7032–7035  crossref  isi  elib  scopus
    2. Chen L., Jiang X.-f., Guo Z., Zhu H., Kao Ts.-Sh., Xu Q.-h., Ho G.W., Hong M., J. Nanomater., 2014, 652829  crossref  isi  scopus
    3. Sokolenko E.V., Inorg. Mater., 51:9 (2015), 862–869  crossref  isi  elib  scopus
    4. Quantum Electron., 46:8 (2016), 719–725  mathnet  crossref  isi  elib
    5. Dey P.P., Khare A., J. Alloy. Compd., 706 (2017), 370–376  crossref  isi  scopus
    6. Belorus A.O., Spivak Yu.M., Pastukhov A.I., Moshnikov V.A., Koshevoi V.L., Proceedings of the 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (Eiconrus), IEEE Nw Russia Young Researchers in Electrical and Electronic Engineering Conference, IEEE, 2019, 765–767  isi
  • Квантовая электроника Quantum Electronics
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