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Kvantovaya Elektronika, 2002, Volume 32, Number 8, Pages 683–688 (Mi qe2271)  

This article is cited in 12 scientific papers (total in 12 papers)

Active media. Lasers

New diode lasers with leaking emission in an optical cavity

V. I. Shveikin, V. A. Gelovani

Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow

Abstract: A new type of a wide-aperture, high-power and efficient semiconductor laser with emission leaking from an active region and involved in lasing is proposed. The principle of its operation is described. Single-mode semiconductor lasers with output apertures at the optical facet of 5 × 6 μm, 7 × 7.5 μm, and 10 × 10 μm and diffraction-limited divergence angles of emission from 6.9 to 12° in the vertical plane and from 3.3 to 7.7° in the horizontal plane are created for the first time. A single-mode cw output power of 0.5 W is obtained at 980 nm in a single-frequency regime with diffraction-limited divergence angles in the horizontal and vertical planes equal to 5.7° and 12.3°, respectively. In the multimode regime, the output powers of 1.3 and 3.0 W were obtained with small divergence angles for ridge widths of 10 and 50 μm, respectively.

Full text: PDF file (149 kB)

English version:
Quantum Electronics, 2002, 32:8, 683–688

Bibliographic databases:

PACS: 42.55.Px, 42.60.Da, 42.60.Jf
Received: 22.04.2002

Citation: V. I. Shveikin, V. A. Gelovani, “New diode lasers with leaking emission in an optical cavity”, Kvantovaya Elektronika, 32:8 (2002), 683–688 [Quantum Electron., 32:8 (2002), 683–688]

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  • http://mi.mathnet.ru/eng/qe/v32/i8/p683

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    1. S. O. Slipchenko, N. A. Pikhtin, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, P. V. Bulaev, I. D. Zalevskii, I. S. Tarasov, Tech Phys Lett, 29:12 (2003), 980  crossref  adsnasa  isi  scopus
    2. S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, Zh. I. Alferov, Semicond, 38:12 (2004), 1430  crossref  adsnasa  isi  scopus
    3. D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. V. Murashova, D. N. Nikolaev, A. L. Stankevich, M. A. Khomylev, V. V. Shamakhov, A. Yu. Leshko, A. V. Lyutetskii, Semicond, 39:3 (2005), 370  crossref  mathscinet  adsnasa  isi  elib  scopus
    4. V. I. Gverdtsiteli, A. G. Rzhanov, Bull Lebedev Phys Inst, 36:11 (2009), 337  crossref  adsnasa  isi  elib  scopus
    5. N Yu Gordeev, I I Novikov, A V Chunareva, N D Il'inskaya, Yu M Shernyakov, M V Maximov, A S Payusov, N A Kalyuzhnyy, S A Mintairov, V M Lantratov, Semicond Sci Technol, 25:4 (2010), 045003  crossref  adsnasa  isi  elib  scopus
    6. Quantum Electron., 40:8 (2010), 661–681  mathnet  crossref  adsnasa  isi  elib
    7. S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. Yu. Leshko, A. V. Rozhkov, Tech. Phys. Lett, 39:4 (2013), 364  crossref  adsnasa  isi  elib  scopus
    8. A. A. Marmalyuk, A. Yu. Andreev, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, Semiconductors, 48:1 (2014), 115  crossref  adsnasa  isi  elib  scopus
    9. T.N. Smirnova, O.V. Sakhno, V.M. Fitio, Yuri Gritsai, Joachim Stumpe, Laser Phys. Lett, 11:12 (2014), 125804  crossref  isi  elib  scopus
    10. Samartsev I.V. Aleshkin V.Ya. Dikareva N.V. Dubinov A.A. Zvonkov B.N. Kolpakov D.A. Nekorkin S.M., Semiconductors, 49:12 (2015), 1571–1574  crossref  isi  scopus
    11. Derzhavin S.I., Yakunin V.P., Grishaev R.V., Kravchenko Y.V., Mamonov D.N., Khomenko M.D., J. Russ. Laser Res., 41:4 (2020), 434–440  crossref  isi  scopus
    12. Quantum Electron., 51:2 (2021), 133–136  mathnet  crossref  isi  elib
  • Квантовая электроника Quantum Electronics
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