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Kvantovaya Elektronika, 2002, Volume 32, Number 9, Pages 753–755 (Mi qe2287)  

This article is cited in 1 scientific paper (total in 1 paper)

Letters

Defect – deformation nanometer self-organisation upon laser recrystallisation of thin amorphous films on substrates

V. I. Emel'yanova, K. I. Eremina, A. A. Sumbatovb

a International Laser Center of Moscow State University
b State Scientific Centre of Russian Federation "L. Ya. Karpov Institute of Physical Chemistry", Moscow

Abstract: A hidden hexagonal order in the arrangement of nanometer crystal grains formed upon laser recrystallisation of thin films of amorphous silicon on a substrate is experimentally found. The hexagonal ordering of the grains and the extremal dependence of the grain size on the laser pulse energy density are described within the framework of the cooperative defect – deformation mechanism of laser recrystallisation.

Full text: PDF file (251 kB)

English version:
Quantum Electronics, 2002, 32:9, 753–755

Bibliographic databases:

PACS: 43.35.N, 61.43.-j, 61.72.Cc, 81.16.Rf, 81.65.Cf
Received: 24.05.2002

Citation: V. I. Emel'yanov, K. I. Eremin, A. A. Sumbatov, “Defect – deformation nanometer self-organisation upon laser recrystallisation of thin amorphous films on substrates”, Kvantovaya Elektronika, 32:9 (2002), 753–755 [Quantum Electron., 32:9 (2002), 753–755]

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  • http://mi.mathnet.ru/eng/qe2287
  • http://mi.mathnet.ru/eng/qe/v32/i9/p753

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. V.I Emel’yanov, Microelectronic Engineering, 69:2-4 (2003), 435  crossref  isi  scopus
  • Квантовая электроника Quantum Electronics
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