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Kvantovaya Elektronika, 2002, Volume 32, Number 12, Pages 1085–1098 (Mi qe2351)  

This article is cited in 4 scientific papers (total in 4 papers)

Special issue devoted to the 80th anniversary of academician N. G. Basov's birth

Semiconductor lasers: from homojunctions to quantum dots

P. G. Eliseevab

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Centre for High Technology Materials, University of New Mexico, USA

Abstract: A brief review of the development of physics and technology of semiconductor lasers, beginning from theoretical proposals made in the late 1950s up to now, is presented. For example, the threshold current density at room temperature, which was 105 – 106 A cm-2 in 1963, has been now reduced to ~10 A cm-2. The main factors that have provided this progress are considered. The mechanisms of energy conversion determining the high efficiency of semiconductor lasers are discussed in detail.

Full text: PDF file (286 kB)

English version:
Quantum Electronics, 2002, 32:12, 1085–1098

Bibliographic databases:

PACS: 42.55.Px, 42.60.Lh
Received: 20.09.2002

Citation: P. G. Eliseev, “Semiconductor lasers: from homojunctions to quantum dots”, Kvantovaya Elektronika, 32:12 (2002), 1085–1098 [Quantum Electron., 32:12 (2002), 1085–1098]

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  • http://mi.mathnet.ru/eng/qe2351
  • http://mi.mathnet.ru/eng/qe/v32/i12/p1085

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Quantum Electron., 40:4 (2010), 305–309  mathnet  crossref  adsnasa  isi  elib
    2. Quantum Electron., 40:8 (2010), 697–699  mathnet  crossref  adsnasa  isi  elib
    3. Quantum Electron., 42:1 (2012), 15–17  mathnet  crossref  adsnasa  isi  elib
    4. Quantum Electron., 45:7 (2015), 607–609  mathnet  crossref  isi  elib
  • Квантовая электроника Quantum Electronics
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