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Kvantovaya Elektronika, 2003, Volume 33, Number 2, Pages 171–176 (Mi qe2380)  

Nonlinear optical phenomena

Photoinduced electronic processes in silicon: the influence of the transverse Dember effect on nonlinear electroreflection

I. M. Baranova, K. N. Evtyukhov, A. N. Murav'ev

Bryansk State Engineering and Technological Academy

Abstract: Electronic processes stimulated by a train of nanosecond laser pulses in a weakly absorbing semiconductor are studied theoretically. It is shown that these processes cause the transverse Dember effect – the appearance of a radial field and an electric potential difference between the illuminated and unlit parts of the semiconductor. The transverse Dember potential difference in silicon is comparable with a typical surface potential and, hence, plays an important role in surface nonlinear-optical processes.

Full text: PDF file (194 kB)

English version:
Quantum Electronics, 2003, 33:2, 171–176

Bibliographic databases:

PACS: 42.70.Nq, 78.40.Fy
Received: 08.04.2002
Revised: 05.08.2002

Citation: I. M. Baranova, K. N. Evtyukhov, A. N. Murav'ev, “Photoinduced electronic processes in silicon: the influence of the transverse Dember effect on nonlinear electroreflection”, Kvantovaya Elektronika, 33:2 (2003), 171–176 [Quantum Electron., 33:2 (2003), 171–176]

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  • http://mi.mathnet.ru/eng/qe/v33/i2/p171

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