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Kvantovaya Elektronika, 2005, Volume 35, Number 5, Pages 445–448 (Mi qe2691)  

This article is cited in 1 scientific paper (total in 1 paper)

Diode lasers

Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices

A. V. Zubanov, M. B. Uspenskiy, V. A. Shishkin

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: The process of ion-chemical etching of mesa-stripes in epitaxial GaAs/AlxGa1-xAs structures on a setup with an inductively coupled plasma source is studied. The advantage of the setup is a high plasma density in the etching area and, therefore, a low ion energy (100—200 eV), which can be varied independently of the RF power. The process is developed for forming narrow (3–5 μm) mesa-stripes with a side-wall tilt of ~85° and the scatter in the values of geometrical parameters equal to ±1% in the etching area of diameter 150 mm. It is shown that, unlike RF etching, the decrease in the photoluminescence intensity in GaAs/AlxGa1-xAs structures is stabilised at the 15%–20% level of the initial intensity even when the etching area is located only at a distance of 100–150 Å from the active region. Comparative tests are performed for ridge superluminescent diodes manufactured by using RF radiation sources and inductively coupled plasma.

Full text: PDF file (120 kB)

English version:
Quantum Electronics, 2005, 35:5, 445–448

Bibliographic databases:

PACS: 42.55.Px, 78.55.-m
Received: 13.04.2004
Revised: 08.10.2004

Citation: A. V. Zubanov, M. B. Uspenskiy, V. A. Shishkin, “Effect of the energy of ion-chemical etching of GaAs/AlxGa1-xAs structures on photoluminescence and degradation of devices”, Kvantovaya Elektronika, 35:5 (2005), 445–448 [Quantum Electron., 35:5 (2005), 445–448]

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  • http://mi.mathnet.ru/eng/qe2691
  • http://mi.mathnet.ru/eng/qe/v35/i5/p445

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    This publication is cited in the following articles:
    1. Quantum Electron., 40:4 (2010), 305–309  mathnet  crossref  adsnasa  isi  elib
  • Квантовая электроника Quantum Electronics
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