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Kvantovaya Elektronika, 2004, Volume 34, Number 12, Pages 1127–1132 (Mi qe2788)  

This article is cited in 2 scientific papers (total in 2 papers)

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Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity

P. G. Eliseevab, J. Leeb, M. A. Osinskib

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Centre for High Technology Materials, University of New Mexico, USA

Abstract: Some radiative and electric properties of heterostructures based on semiconductor nitrides emitting in the visible and UV regions are considered. The following anomalous properties of UV-emitting heterostructures are studied: the low-temperature emission quenching, a strong non-ideality of I–V curves, and the increase in the slope of these characteristics upon cooling. The anomalous emission quenching is especially typical for ~3-nm thick single-quantum-well structures, but it is absent in a 50-nm thick double heterostructure. It seems that this difference is caused by the fact that the capture of carriers at the levels in quantum wells slows down upon cooling, and a 'through' injection of carriers occurs into the opposite emitter layer. In addition, electrons injected into the p region reduce its resistance. The consideration of the injection-induced conductivity in the passive layer allows us to explain satisfactorily the electric anomalies.

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English version:
Quantum Electronics, 2004, 34:12, 1127–1132

Bibliographic databases:

PACS: 42.55.Px, 78.20.Jq
Received: 08.07.2004

Citation: P. G. Eliseev, J. Lee, M. A. Osinski, “Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity”, Kvantovaya Elektronika, 34:12 (2004), 1127–1132 [Quantum Electron., 34:12 (2004), 1127–1132]

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  • http://mi.mathnet.ru/eng/qe/v34/i12/p1127

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. T. Świetlik, G. Franssen, P. Wiśniewski, S. Krukowski, S. P. Łepkowski, L. Marona, M. Leszczyński, P. Prystawko, I. Grzegory, T. Suski, Appl Phys Lett, 88:7 (2006), 071121  crossref  adsnasa  isi  scopus
    2. Vitaliy Avrutin, Sh.d.i.A.hmad Hafiz, Fan Zhang, Ümit Özgür, Hadis Morkoç, J. Vac. Sci. Technol. A, 31:5 (2013), 050809  crossref  mathscinet  isi  scopus
  • Квантовая электроника Quantum Electronics
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