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Kvantovaya Elektronika, 2004, Volume 34, Number 12, Pages 1173–1176 (Mi qe2793)  

Nonlinear optical phenomena

Self-reflection effect in semiconductors in a two-pulse regime

P. I. Khadzhi, L. Yu. Nad'kin

Department of Physics and Mathematics, Pridnestrie State University, Tiraspol

Abstract: Peculiarities of reflection at the end face of a semi-infinite semiconductor in a two-pulse regime are studied. The reflection functions behave in a complex and ambiguous manner governed by the amplitudes of the fields of incident pulses. The possibility of a complete bleaching of the medium for the field in the M-band is predicted.

Full text: PDF file (127 kB)

English version:
Quantum Electronics, 2004, 34:12, 1173–1176

Bibliographic databases:

PACS: 42.50.Md, 42.60.Gd, 42.65.Re
Received: 09.07.2004

Citation: P. I. Khadzhi, L. Yu. Nad'kin, “Self-reflection effect in semiconductors in a two-pulse regime”, Kvantovaya Elektronika, 34:12 (2004), 1173–1176 [Quantum Electron., 34:12 (2004), 1173–1176]

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  • http://mi.mathnet.ru/eng/qe2793
  • http://mi.mathnet.ru/eng/qe/v34/i12/p1173

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