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Kvantovaya Elektronika, 2005, Volume 35, Number 4, Pages 316–322 (Mi qe2909)  

This article is cited in 4 scientific papers (total in 4 papers)

Lasers

Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers

D. V. Batraka, S. A. Bogatovab, A. V. Borodaenkob, A. E. Drakina, A. P. Bogatova

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region

Abstract: The spectral profile of the optical gain and the spectral dependence of the coefficient characterising the variation in the refractive index with a carrier concentration are calculated using the three-band model for an active quantum-well InGaAs layer. A comparison of the theoretical results with the experimental data gave values of parameters allowing the numerical simulation of the material parameters of the active layer with a high degree of accuracy.

Full text: PDF file (180 kB)

English version:
Quantum Electronics, 2005, 35:4, 316–322

Bibliographic databases:

PACS: 42.55.Px, 42.60.Lh
Received: 22.10.2004

Citation: D. V. Batrak, S. A. Bogatova, A. V. Borodaenko, A. E. Drakin, A. P. Bogatov, “Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers”, Kvantovaya Elektronika, 35:4 (2005), 316–322 [Quantum Electron., 35:4 (2005), 316–322]

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  • http://mi.mathnet.ru/eng/qe/v35/i4/p316

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. D R Miftakhutdinov, I V Akimova, Alexandr P Bogatov, T I Gushchik, A E Drakin, N V D'yachkov, V V Popovichev, A P Nekrasov, QUANTUM ELECTRON, 38:11 (2008), 993  mathnet  crossref  adsnasa  isi  elib  scopus
    2. Quantum Electron., 41:1 (2011), 20–25  mathnet  crossref  adsnasa  isi  elib
    3. Zink Ch., Christensen M., Jamal M.T., Hansen A.K., Maiwald M., Jensen O.B., Sumpf B., Traenkle G., Proceedings of Spie, 10939, eds. Belyanin A., Smowton P., Spie-Int Soc Optical Engineering, 2019, UNSP 109391J  crossref  isi
    4. Quantum Electron., 49:8 (2019), 728–734  mathnet  crossref  isi  elib
  • Квантовая электроника Quantum Electronics
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