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Kvantovaya Elektronika, 1971, Number 2, Pages 92–93 (Mi qe3047)  

Brief Communications

Electron-beam-pumped high-power semiconductor laser

O. V. Bogdankevich, M. M. Zverev, A. N. Mestvirishvili, A. S. Nasibov, A. N. Pechenov, A. I. Svinenkov, K. P. Fedoseev


Abstract: Many-element gallium arsenide and cadmium sulfide structures, pumped by electron-beam bombardment, were investigated with the aim of increasing output power. A power output of 1.5 MW was achieved for a gallium arsenide laser excited by bombardment with a 300-A beam of electrons of 300-keV energy.

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English version:
Soviet Journal of Quantum Electronics, 1971, 1:2, 184–185

UDC: 621.378.35
PACS: 42.55.Px, 42.60.Jf, 42.60.Lh
Received: 13.10.1970

Citation: O. V. Bogdankevich, M. M. Zverev, A. N. Mestvirishvili, A. S. Nasibov, A. N. Pechenov, A. I. Svinenkov, K. P. Fedoseev, “Electron-beam-pumped high-power semiconductor laser”, Kvantovaya Elektronika, 2 (1971), 92–93 [Sov J Quantum Electron, 1:2 (1971), 184–185]

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  • Квантовая электроника Quantum Electronics
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