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Brief Communications Electron-beam-pumped high-power semiconductor laser O. V. Bogdankevich, M. M. Zverev, A. N. Mestvirishvili, A. S. Nasibov, A. N. Pechenov, A. I. Svinenkov, K. P. Fedoseev Abstract: Many-element gallium arsenide and cadmium sulfide structures, pumped by electron-beam bombardment, were investigated with the aim of increasing output power. A power output of 1.5 MW was achieved for a gallium arsenide laser excited by bombardment with a 300-A beam of electrons of 300-keV energy.  Full text:
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English version: Soviet Journal of Quantum Electronics, 1971, 1:2, 
UDC: 621.378.35 PACS: 42.55.Px, 42.60.Jf, 42.60.Lh Received: 13.10.1970 Citation: O. V. Bogdankevich, M. M. Zverev, A. N. Mestvirishvili, A. S. Nasibov, A. N. Pechenov, A. I. Svinenkov, K. P. Fedoseev, “Electron-beam-pumped high-power semiconductor laser”, Kvantovaya Elektronika, 2 (1971), Linking options:
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