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Kvantovaya Elektronika, 1971, Number 2, Pages 94–96 (Mi qe3048)  

Brief Communications

Parameters of injection lasers made of gallium arsenide crystals with different dislocation densities

V. B. Osvenskii, G. P. Proshko, S. M. Sizov


Abstract: An investigation was made of the influence of growth dislocations on the watt-ampere (output radiation-injection current) characteristics of injection lasers made of tellurium-doped gallium arsenide, in which the carrier density was (1–3) · 1018 cm–3. These lasers were prepared from plates where the dislocation density ranged from 102 to 105 cm–2. It was established that the optical inhomogeneity of the plates was not related to the distribution of the dislocations in the bulk of the material. No definite correlation was found between the dislocation density in the original crystals and the laser parameters such as the pulse output power, efficiency, or threshold current density.

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English version:
Soviet Journal of Quantum Electronics, 1971, 1:2, 186–188

UDC: 21.378.35
PACS: 42.55.Px, 42.60.By, 42.60.Jf, 42.60.Lh, 61.72.Hh
Received: 21.09.1970

Citation: V. B. Osvenskii, G. P. Proshko, S. M. Sizov, “Parameters of injection lasers made of gallium arsenide crystals with different dislocation densities”, Kvantovaya Elektronika, 2 (1971), 94–96 [Sov J Quantum Electron, 1:2 (1971), 186–188]

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