Parameters of injection lasers made of gallium arsenide crystals with different dislocation densities

An investigation was made of the influence of growth dislocations on the watt-ampere (output radiation-injection current) characteristics of injection lasers made of tellurium-doped gallium arsenide, in which the carrier density was (1–3) · 10¹⁸ cm^–3. These lasers were prepared from plates where the dislocation density ranged from 10² to 10⁵ cm^–2. It was established that the optical inhomogeneity of the plates was not related to the distribution of the dislocations in the bulk of the material. No definite correlation was found between the dislocation density in the original crystals and the laser parameters such as the pulse output power, efficiency, or threshold current density.