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Kvantovaya Elektronika, 1993, Volume 20, Number 9, Pages 837–838 (Mi qe3155)  

Lasers

Determining the activation energy of the degradation of InGaAsP heterojunction lasers at λ = 1.55 μm

R. I. Andreeva, A. A. Kochetkov, V. N. Nikolaev


Abstract: The service lifetime of InGaAsP heterojunction lasers operating at λ = 1.55 μm has been tested. Stepwise tests of this sort reveal the activation energy for the degradation process in the temperature interval 50–70 °C.

Full text: PDF file (83 kB)

English version:
Quantum Electronics, 1993, 23:9, 725

Bibliographic databases:

UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.By, 42.60.Lh
Received: 26.02.1993

Citation: R. I. Andreeva, A. A. Kochetkov, V. N. Nikolaev, “Determining the activation energy of the degradation of InGaAsP heterojunction lasers at λ = 1.55 μm”, Kvantovaya Elektronika, 20:9 (1993), 837–838 [Quantum Electron., 23:9 (1993), 725]

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  • http://mi.mathnet.ru/eng/qe3155
  • http://mi.mathnet.ru/eng/qe/v20/i9/p837

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