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Kvantovaya Elektronika, 1981, Volume 8, Number 6, Pages 1336–1338 (Mi qe7088)  

Brief Communications

Problem of forecasting the reliability of Ga1–xAlxAs–GaAs heterojunction lasers

N. P. Chernousov, K. I. Inozemtsev, A. V. Boroshnev


Abstract: A study was made of the possibility of forecasting the service life of Ga1–xAlxAs–GaAs heterolasers from the relative intensity of the emission band of 1.0 eV energy in the electroluminescence spectrum, measured before the use of these devices as lasers. It was found that there was a correlation between the service life of heterolasers and the intensity of the 1.0 eV band for time spans from a few to many thousands of hours.

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English version:
Soviet Journal of Quantum Electronics, 1981, 11:6, 802–803

Bibliographic databases:

UDC: 621.373.826.038.825.4
PACS: 42.55.Px
Received: 11.11.1980

Citation: N. P. Chernousov, K. I. Inozemtsev, A. V. Boroshnev, “Problem of forecasting the reliability of Ga1–xAlxAs–GaAs heterojunction lasers”, Kvantovaya Elektronika, 8:6 (1981), 1336–1338 [Sov J Quantum Electron, 11:6 (1981), 802–803]

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  • http://mi.mathnet.ru/eng/qe/v8/i6/p1336

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