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Kvantovaya Elektronika, 1985, Volume 12, Number 10, Pages 2161–2162 (Mi qe7940)  

Brief Communications

Luminescence spectra of metal-barrier-metal structures

P. Varga, G. Vertosi, I. Gyulaĭ, G. Kiss, N. Kroo, Zh. Sentirmaĭ, E. M. Soboleva, A. G. Sobolev, S. I. Sagitov, A. V. Uskov


Abstract: A study was made of the influence of the technology used in the fabrication of a dielectric barrier on the luminescence spectrum of a metal–barrier–metal (MBM) diode. The barrier was formed by electron-beam sputtering or by ion implantation. Various methods of fabrication of the barrier layer affected the electrophysical characteristics, but not the spectral properties of tunnel MBM diodes. This confirmed that the plasma mechanism was the main reason for the luminescence of radiation by MBM diodes.

Full text: PDF file (342 kB)

English version:
Soviet Journal of Quantum Electronics, 1985, 15:10, 1423–1424

Bibliographic databases:

UDC: 621.373.826
PACS: 85.30.Kk, 85.30.De
Received: 17.01.1985

Citation: P. Varga, G. Vertosi, I. Gyulaĭ, G. Kiss, N. Kroo, Zh. Sentirmaĭ, E. M. Soboleva, A. G. Sobolev, S. I. Sagitov, A. V. Uskov, “Luminescence spectra of metal-barrier-metal structures”, Kvantovaya Elektronika, 12:10 (1985), 2161–2162 [Sov J Quantum Electron, 15:10 (1985), 1423–1424]

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  • http://mi.mathnet.ru/eng/qe/v12/i10/p2161

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  • Квантовая электроника Quantum Electronics
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