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Kvantovaya Elektronika, 2005, Volume 35, Number 9, Pages 787–790 (Mi qe9165)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum

P. G. Eliseevab, Ch. Liub, H. Caob, M. A. Osinskib

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b Centre for High Technology Materials, University of New Mexico, USA

Abstract: Mode-beating spectra and their current and temperature dependences are studied in a semiconductor laser. In the mode-beating spectrum of InGaAs quantum well lasers, the anomalous splitting of the difference-frequency line into three components f0, f+ and f- is observed. The splitting increases with increasing optical power above the threshold. The component f0 is less mobile and shifts to the red with increasing temperature. The component f+ shifts to the blue, whereas the weak f0 component shifts to the red. The difference f+-f0 amounts to 400 MHz, which is ~5% of the value of f0 in a 5-mm long diode cavity. No anomalous splitting was observed in quantum dot lasers.

Full text: PDF file (136 kB)

English version:
Quantum Electronics, 2005, 35:9, 787–790

Bibliographic databases:

PACS: 42.55.Px
Received: 02.06.2005

Citation: P. G. Eliseev, Ch. Liu, H. Cao, M. A. Osinski, “Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum”, Kvantovaya Elektronika, 35:9 (2005), 787–790 [Quantum Electron., 35:9 (2005), 787–790]

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  • http://mi.mathnet.ru/eng/qe9165
  • http://mi.mathnet.ru/eng/qe/v35/i9/p787

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    This publication is cited in the following articles:
    1. Quantum Electron., 40:3 (2010), 199–202  mathnet  crossref  adsnasa  isi  elib
  • Квантовая электроника Quantum Electronics
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