Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1974, Volume 1, Number 6, Pages 1442–1445 (Mi qe9335)  

This article is cited in 1 scientific paper (total in 1 paper)

Measurement of the 150-nm brightness temperature of a high-current discharge in nitrogen

B. L. Borovich, V. S. Zuev, E. P. Nalegach, A. V. Startsev


Abstract: A photoelectric method was used to determine the brightness temperature (in the region of 150 nm) of a high-current discharge in nitrogen at a pressure of 1 atm. A standard source of light, utilizing pulsed discharges in an evacuated capillary and characterized by a brightness temperature of 37000°K, was used for calibration purposes. When the current was ~250 kA and the rise time was ~5 μsec, the discharge in nitrogen behaved as a blackbody with a temperature of 36000°K.

Full text: PDF file (828 kB)

English version:
Soviet Journal of Quantum Electronics, 1974, 4:6, 799–800

UDC: 621.378
PACS: 52.80.Tn, 07.60.Dq, 07.20.-n
Received: 11.02.1974

Citation: B. L. Borovich, V. S. Zuev, E. P. Nalegach, A. V. Startsev, “Measurement of the 150-nm brightness temperature of a high-current discharge in nitrogen”, Kvantovaya Elektronika, 1:6 (1974), 1442–1445 [Sov J Quantum Electron, 4:6 (1974), 799–800]

Linking options:
  • http://mi.mathnet.ru/eng/qe9335
  • http://mi.mathnet.ru/eng/qe/v1/i6/p1442

    SHARE: VKontakte.ru FaceBook Twitter Mail.ru Livejournal Memori.ru


    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Mikheev L.D. Tcheremiskine V.I. Uteza O.P. Sentis M.L., Prog. Quantum Electron., 36:1, SI (2012), 98–142  crossref  isi
  • Квантовая электроника Quantum Electronics
    Number of views:
    This page:67
    Full text:47

     
    Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2022