Kinetic equations for a system of partly coherent high-density polaritions in semiconductors
I. V. Belousov, Yu. M. Shvera
Kinetic equations describing the behavior of a system of high-density polaritons excited in a direct-gap semiconductor by laser radiation are obtained in the Born approximation. It is noted that the presence in the system of a nonequilibrium Bose–Einstein condensate of polaritons, and also the possibility of its real decay, lead to a number of special features in its description. The equations are derived by the nonequilibrium statistical operator method formulated in terms of generating functionals.
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Theoretical and Mathematical Physics, 1990, 85:2, 1177–1184
I. V. Belousov, Yu. M. Shvera, “Kinetic equations for a system of partly coherent high-density polaritions in semiconductors”, TMF, 85:2 (1990), 237–247; Theoret. and Math. Phys., 85:2 (1990), 1177–1184
Citation in format AMSBIB
\by I.~V.~Belousov, Yu.~M.~Shvera
\paper Kinetic equations for a~system of~partly coherent high-density polaritions in~semiconductors
\jour Theoret. and Math. Phys.
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