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TVT, 2019, Volume 57, Issue 2, Pages 301–303 (Mi tvt10995)  

Short Communications

Emittance properties of siliconized silicon carbide in the temperature range of $1400$$2200$ K

A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow

Abstract: The results of an experimental study of the total hemispherical and spectral normal emittances powers of siliconized silicon carbide in the temperature range of $1400$$2200$ K are presented for the first time.

Funding Agency Grant Number
Russian Foundation for Basic Research 15-08-06279
This study was supported by the Russian Foundation for Basic Research, project no. 15-08-06279.


DOI: https://doi.org/10.1134/S0040364419020091

Full text: PDF file (216 kB)

English version:
High Temperature, 2019, 57:2, 272–274

Bibliographic databases:

UDC: 535.233.213
Received: 11.01.2018
Accepted:10.10.2018

Citation: A. V. Kostanovskii, M. G. Zeodinov, M. E. Kostanovskaya, A. A. Pronkin, “Emittance properties of siliconized silicon carbide in the temperature range of $1400$$2200$ K”, TVT, 57:2 (2019), 301–303; High Temperature, 57:2 (2019), 272–274

Citation in format AMSBIB
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