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UFN, 1996, Volume 166, Number 7, Pages 807–808 (Mi ufn1211)  

This article is cited in 2 scientific papers (total in 2 papers)

BIBLIOGRAPHY

Handbook on the physical properties of Ge, Si, GaAs and InP
byA Dargys and J Kundrotas


V. S. Vavilov


DOI: https://doi.org/10.3367/UFNr.0166.199607j.0807

Full text: PDF file (285 kB)
Full text: http://www.ufn.ru/ru/articles/1996/7/j/

English version:
Physics–Uspekhi, 1996, 39:7, 757

Bibliographic databases:

PACS: 01.30.Kj, 73.61.-r, 72.80.Ey, 78.30.Fs

Citation: V. S. Vavilov, “Handbook on the physical properties of Ge, Si, GaAs and InP
byA Dargys and J Kundrotas”, UFN, 166:7 (1996), 807–808; Phys. Usp., 39:7 (1996), 757

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  • http://mi.mathnet.ru/eng/ufn/v166/i7/p807

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    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles

    This publication is cited in the following articles:
    1. Zhanghui Chen, Xiangwei Jiang, Shan Dong, Jingbo Li, Shushen Li, “Insight into the photoelectron angular dependent energy distribution of negative-electron-affinity InP photocathodes”, Appl. Phys. Lett, 104:2 (2014), 021120  crossref  isi  scopus
    2. A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, Phys. Usp., 62:8 (2019), 754–794  mathnet  crossref  crossref  adsnasa  isi
  • Успехи физических наук Physics-Uspekhi
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