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UFN, 2003, Volume 173, Number 5, Pages 465–490 (Mi ufn2135)  

This article is cited in 37 scientific papers (total in 37 papers)

REVIEWS OF TOPICAL PROBLEMS

Nonequilibrium 1/f γ noise in conducting films and contacts

G. P. Zhigal'skii

Moscow State Institute of Electronic Engineering

Abstract: Work on nonequilibrium flicker-noise (1/f γ noise or NEFN) in conducting films of various materials and in thin-film contacts is reviewed. Experimental methods for studying nonequilibrium flicker fluctuations by separating NEFN from the total noise are suggested. Published results on NEFN in metal and alloy films, Ni/Cr-film and TaxNy-film resistors, and contacts are systematized. It is shown that various kinds of NEFN occur in conducting films. Depending on test conditions, external influences, and the film microstructure, both stationary and non-stationary NEFNs are observed. The use of 1/f γ noise measurements for nondestructively controlling the quality of thin-film conductors is substantiated. For most of the passive IC components (thin-film conductors, resistive layers, contacts), NEFN makes a much more informative quality indicator than equilibrium flicker-noise.

DOI: https://doi.org/10.3367/UFNr.0173.200305a.0465

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Full text: http://www.ufn.ru/.../a
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English version:
Physics–Uspekhi, 2003, 46:5, 449–471

Bibliographic databases:

PACS: 05.40.Ca, 72.70.+m, 73.50.Td, 85.40.Qx
Received: May 15, 2002
Revised: February 17, 2003

Citation: G. P. Zhigal'skii, “Nonequilibrium 1/f γ noise in conducting films and contacts”, UFN, 173:5 (2003), 465–490; Phys. Usp., 46:5 (2003), 449–471

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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. Zhigal'skii G.P., “1/f noise nonlinear effects in metal films and contacts: physics and applications”, Fluctuations and Noise in Materials, SPIE Proceedings Series, 2004, 296–309  crossref  adsnasa  isi  scopus
    2. Vitusevich S.A., Danylyuk S.V., Klein N., Petrychuk M.V., Belyaev A.E., “Power and temperature dependence of low frequency noise in AlGaN/GaN transmission line model structures”, Journal of Applied Physics, 96:10 (2004), 5625–5630  crossref  adsnasa  isi  scopus
    3. Vitusevich S.A., Danylyuk S.V., Petrychuk M.V., Antoniuk O.A., Klein N., Belyaev A.E., “Equilibrium and non-equilibrium 1/f noise in AlGaN/GaN TLM structures”, Applied Surface Science, 238:1–4 (2004), 143–146  crossref  adsnasa  isi  scopus
    4. Veklenko B.A., “Thermal 1/omega fluctuations of a quantum oscillator under a parametric effect of a random field”, Zh Èksper Teoret Fiz, 101:3 (2005), 568–574  crossref  adsnasa  isi  scopus
    5. Zhigal'skii G.P., Bespalov V.A., Gorbatsevich A.A., Il'ichev E.A., Shmelev S.S., Andrushchenko S.A., Rodin M.S., “Effect of deep trapping levels on the excess noise in GaAs high-energy particle detectors”, Journal of Communications Technology and Electronics, 50:6 (2005), 667–672  isi
    6. Zhigal'skii G.P., “Nondestructive quality control of integrated circuits by electrical noise and nonlinearity characteristics”, Journal of Communications Technology and Electronics, 50:5 (2005), 477–502  isi
    7. Rumyantsev S.L., Levinshtein M.E., Gurevich S.A., Kozhevin V.M., Yavsin D.A., Shur M.S., Pala N., Khanna A., “Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold”, Physics of the Solid State, 48:11 (2006), 2194–2198  crossref  adsnasa  isi  scopus
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    10. Zhigal'skii G.P., Gvas'kov A.A., Sitkin P.O., “1/f Noise in metal insulator semiconductor transistors with different conductivity types and different topological dimensions of the channel”, Journal of Communications Technology and Electronics, 52:6 (2007), 701–705  crossref  isi  scopus
    11. Gerashchenko O.V., “Anomalously low current noise in nanostructured NdFeBC ceramics”, Technical Physics Letters, 34:2 (2008), 124–125  crossref  adsnasa  isi  elib
    12. Averkiev N.S., Chernyakov A.E., Levinshtein M.E., Petrov P.V., Yakimov E.B., Shmidt N.M., Shabunina E.I., “Two channels of non-radiative recombination in InGaN/GaN LEDs”, Physica B-Condensed Matter, 404:23–24 (2009), 4896–4898  crossref  adsnasa  isi  elib  scopus
    13. Averkiev N.S., Levinshtein M.E., Petrov P.V., Chernyakov A.E., Shabunina E.I., Shmidt N.M., “Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current”, Technical Physics Letters, 35:10 (2009), 922–924  crossref  adsnasa  isi  elib  scopus
    14. B Kaulakys, M Alaburda, “Modeling scaled processes and 1/f<sup>β</sup> noise using nonlinear stochastic differential equations”, J Stat Mech Theor Exp, 2009:2 (2009), P02051  crossref  isi  elib  scopus
    15. Z. A. Kolodiy, A. Z. Kolodiy, “Calculation of the noise level in electronic elements”, Aut Conrol Comp Sci, 43:4 (2009), 179  crossref  scopus
    16. Zhigal'skii G.P., “Excess noise and nonlinear effects in low-dimensional conductors”, Journal of Communications Technology and Electronics, 55:3 (2010), 241–255  crossref  isi  scopus
    17. Z. A. Kolodiy, “Flicker-noise of electronic equipment: Sources, ways of reduction and application”, Radioelectron Commun Syst, 53:8 (2010), 412  crossref  scopus
    18. A. A. Shulginov, “Klasternyi analiz fluktuatsii provodimosti tonkikh platinovykh plenok”, Vestn. Yuzhno-Ur. un-ta. Ser. Matem. Mekh. Fiz., 2010, no. 3, 112–116  mathnet
    19. Budak V.P., Veklenko B.A., “Boson peak, flickering noise, backscattering processes and radiative transfer in random media”, Journal of Quantitative Spectroscopy & Radiative Transfer, 112:5 (2011), 864–875  crossref  adsnasa  isi  scopus
    20. Belogolovskii M., Jung G., Markovich V., Dolgin B., Wu X.D., Yuzhelevski Y., “Bias dependent 1/f conductivity fluctuations in low-doped La1-xCaxMnO3 manganite single crystals”, Journal of Applied Physics, 109:7 (2011), 073920  crossref  adsnasa  isi  scopus
    21. I. I. Gorban, “Statistically instable processes: Connection with flicker, nonequilibrium, fractal and colored noise”, Radioelectron.Commun.Syst, 55:3 (2012), 99  crossref  scopus
    22. A. L. Zakheim, M. E. Levinshtein, V. P. Petrov, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, “Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs”, Semiconductors, 46:2 (2012), 208  crossref  adsnasa  isi  elib  scopus
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    24. Chernyakov A.E., Levinshtein M.E., Petrov P.V., Shmidt N.M., Shabunina E.I., Zakheim A.L., “Failure Mechanisms in Blue Ingan/Gan Leds for High Power Operation”, Microelectron. Reliab., 52:9-10, SI (2012), 2180–2183  crossref  isi  elib  scopus
    25. Gorban I.I., “Statisticheski neustoichivye protsessy: svyaz s flikker, neravnovesnymi, fraktalnymi i tsvetnymi shumami”, Izvestiya vysshikh uchebnykh zavedenii. radioelektronika, 55:3 (2012), 3–18  elib
    26. Shmidt N., Greshnov A., Chernyakov A., Levinshtein M., Zakgeim A., Shabunina E., “Mechanisms Behind Efficiency Droop and Degradation in Ingan/Gan Leds”, Physica Status Solidi C: Current Topics in Solid State Physics, Vol 10, No 3, Physica Status Solidi C-Current Topics in Solid State Physics, 10, no. 3, eds. Toropov A., Ivanov S., 2013, 332–334  crossref  isi  scopus
    27. O. V. Gerashchenko, V. A. Matveev, N. K. Pleshanov, V. Yu. Bairamukov, “Electrical resistance and 1/f fluctuations in thin titanium films”, Phys. Solid State, 56:7 (2014), 1438  crossref  isi  elib  scopus
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    30. G. P. Zhigal’skii, T. A. Kholomina, “Excess noise and deep levels in GaAs detectors of nuclear particles and ionizing radiation”, J. Commun. Technol. Electron, 60:6 (2015), 517  crossref  isi  scopus
    31. Yu. E. Kuzovlev, “Why nature needs 1/f noise”, Phys. Usp., 58:7 (2015), 719–729  mathnet  crossref  crossref  adsnasa  isi  elib  elib
    32. Janahmadov A.Kh., “Flicker Noise Spectroscopy (FNS) of Dynamics Signals and Its Application in Wear of Oil-Field Compressor Units (OFCU)”: Janahmadov, AK Javadov, MY, Synergetics and Fractals in Tribology, Materials Forming, Machining and Tribology, Springer Int Publishing Ag, 2016, 333–381  crossref  isi
    33. Chernyakov A.E., Kartashova A.P., Shmidt N.M., Shabunina E.I., Talnishnikh N.A., Zakgeim A.L., “Criteria of Unpredictable Failure For High-Power Ingan Leds”, 2016 17Th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (Eurosime), IEEE, 2016  isi
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    36. Kolodiy Z.A., Stadnyk B.I., Yatsyshyn S.P., Kolodiy A.Z., “Energy Spectrum of Stochastic Signals Caused By Variations of Electrical Resistance”, Autom. Control Comp. Sci., 52:4 (2018), 311–316  crossref  isi  scopus
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