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UFN, 2003, Volume 173, Number 6, Pages 649–665 (Mi ufn2144)  

This article is cited in 26 scientific papers (total in 26 papers)


Cadmium mercury telluride and the new generation of photoelectronic devices

V. P. Ponomarenko

State Research Center of Russian Federation, Federal State Unitary Enterprise "RD&P Center "Orion"

Abstract: This paper is a 1969–2002 progress report on the development of solid semiconductor solutions of cadmium-mercury tellurides (single crystals and epitaxial layers) as well as of infrared photodetectors based on them (photoresistors and photodiodes, including the array variety).


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English version:
Physics–Uspekhi, 2003, 46:6, 629–644

Bibliographic databases:

PACS: 01.65.+g, 07.57.Kp, 85.60.Gz
Received: December 4, 2002

Citation: V. P. Ponomarenko, “Cadmium mercury telluride and the new generation of photoelectronic devices”, UFN, 173:6 (2003), 649–665; Phys. Usp., 46:6 (2003), 629–644

Citation in format AMSBIB
\by V.~P.~Ponomarenko
\paper Cadmium mercury telluride and the new generation of photoelectronic devices
\jour UFN
\yr 2003
\vol 173
\issue 6
\pages 649--665
\jour Phys. Usp.
\yr 2003
\vol 46
\issue 6
\pages 629--644

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    This publication is cited in the following articles:
    1. Bogoboyashchyy V.V., Elizarov A.I., Izhnin I.I., “Conversion of conductivity type in Cu-doped Hg0.8Cd0.2Te crystals under ion beam milling”, Semiconductor Science and Technology, 20:8 (2005), 726–732  crossref  adsnasa  isi  scopus
    2. Bogoboyashchyy V.V., Izhnin I.I., Mynbaev K.D., Pociask M., Vlasov A.P., “Relaxation of electrical properties of n-type layers formed by ion milling in epitaxial HgCdTe doped with V-group acceptors”, Semiconductor Science and Technology, 21:8 (2006), 1144–1149  crossref  adsnasa  isi  scopus
    3. Bogoboyashchyy V.V., Izhnin I.I., Mynbaev K.D., “The nature of the compositional dependence of p-n junction depth in ion-milled p-HgCdTe”, Semiconductor Science and Technology, 21:2 (2006), 116–123  crossref  adsnasa  isi  scopus
    4. K. D. Mynbaev, V. I. Ivanov-Omskiǐ, “Doping of epitaxial layers and heterostructures based on HgCdTe”, Semicond, 40:1 (2006), 1  crossref  adsnasa  isi  elib  scopus
    5. Izhnin I., Korbutyak D., Pociask M., Savchyn V., “Luminescence investigation of ion milled CdTe”, Physica Status Solidi C, Current Topics in Solid State Physics, 3:4 (2006), 1063–1065  crossref  adsnasa  isi  scopus
    6. Izhnin I.I., Bogoboyashchyy V.V., Vlasov A.P., Mynbaev K.D., Pociask M., “Relaxation of electrical properties of epitaxial CdxHg1-xTe: As(Sb) layers converted into n-type by ion milling”, 19th International Conference on Photoelectronics and Night Vision Devices, Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), 6636, 2007, 63612–63612  isi
    7. Izhnin I.I., Dvoretsky S.A., Mikhailov N.N., Sidorov Yu.G., Varavin V.S., Mynbaev K.D., Pociask M., “Conductivity type conversion in ion-milled p-HgCdTe: As heterostructures grown by molecular beam epitaxy”, Applied Physics Letters, 91:13 (2007), 132106  crossref  adsnasa  isi  elib  scopus
    8. Bogoboyashchyy V.V., Izhnin I.I., Pociask M., Mynbaev K.D., Ivanov-Omskii V.I., “Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal”, Semiconductors, 41:7 (2007), 804–809  crossref  adsnasa  isi  elib  scopus
    9. Voitsekhovskii A.V., Grigor'ev D.V., Talipov N.Kh., “Ion implantation into heteroepitaxial Cd (x) Hg1-x Te grown by molecular-beam epitaxy”, Russian Physics Journal, 51:10 (2008), 1001–1015  crossref  adsnasa  isi  elib  scopus
    10. Pociask M., Izhnin I.I., Dvoretsky S.A., Mikhailov N.N., Sidorov Yu.G., Varavin V.S., Mynbaev K.D., Ivanov-Omskii V.I., “Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching”, Semiconductors, 42:12 (2008), 1413–1415  crossref  adsnasa  isi  elib  scopus
    11. Kotkov A.P., Grishnova N.D., Moiseev A.N., Suchkov A.I., Denisov I.A., Smirnova N.A., Shmatov N.I., Drozdov M.N., “Production of Double-Layer Epitaxial Structures Based on the Solid Solution of the Cd-Hg-Te System Using a Combination of LPE and MOCVD Techniques”, Inorganic Materials, 44:12 (2008), 1305–1311  crossref  isi  elib  scopus
    12. Izhnin I.I., Dvoretsky S.A., Mikhailov N.N., Sidorov Yu.G., Varavin V.S., Pociask M., Mynbaev K.D., “Ion-Beam-Induced Modification of the Electrical Properties of Vacancy-Doped Mercury Cadmium Telluride”, Technical Physics Letters, 34:11 (2008), 981–984  crossref  adsnasa  isi  elib  scopus
    13. Burlakov I.D., Demin A.V., Levin G.G., Piskunov N.A., Zabotnov S.V., Kashuba A.S., “Measurement of Intensity of the Second Optical Harmonic in Heteroepitaxial Cadmium-Mercury Telluride Structures”, Measurement Techniques, 53:6 (2010), 615–619  crossref  isi  elib  scopus
    14. Pociask M., Izhnin I.I., Mynbaev K.D., Izhnin A.I., Dvoretsky S.A., Mikhailov N.N., Sidorov Yu.G., Varavin V.S., “Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling”, Thin Solid Films, 518:14 (2010), 3879–3881  crossref  adsnasa  isi  elib  scopus
    15. Burlakov I.D., Kashuba A.S., Demin A.V., Zabotnov S.V., “Generatsiya vtoroi opticheskoi garmoniki v geteroepitaksialnykh strukturakh tellurida kadmiya-rtuti”, Prikladnaya fizika, 2011, no. 2, 103–106  elib
    16. Korneeva M.D., Ponomarenko V.P., Filachëv A.M., “Sovremennoe sostoyanie i novye napravleniya poluprovodnikovoi IK-fotoelektroniki”, Prikladnaya fizika, 2011, no. 2, 47–60  elib
    17. Berchenko N.N., Elizarov A.I., “Metody analiza yavlenii perenosa v HgCdTe pri nalichii neskolkikh tipov nositelei”, Prikladnaya fizika, 2011, no. 4, 79–87  elib
    18. Yu. G. Nurullaev, B. Sh. Barkhalov, S. K. Novruzova, “Effect of γ-irradiation on conductivity of cadmium-mercury-tellurium single crystals in weak and strong electric fields”, High Energy Chem, 46:4 (2012), 266  crossref  isi  scopus
    19. Nurullaev Yu.G., Barkhalov B.Sh., Novruzova S.K., Khimiya vysokikh energii, 46:4 (2012), 314–314  elib
    20. V. A. Kholodnov, “On the theory of the photoelectric effect in surface-graded-gap semiconductors”, Semiconductors, 47:1 (2013), 66  crossref  adsnasa  isi  elib  scopus
    21. Nurullaev Yu.G., Barkhalov B.Sh., Novruzova S.K., Khimiya vysokikh energii, 47:3 (2013), 223–223  elib
    22. Yu. G. Nurullaev, B. S. Barkhalov, S. K. Novruzova, “Thermal electromotive force of hot carriers in γ-irradiated single crystals of cadmium mercury tellurides”, High Energy Chem, 47:3 (2013), 127  crossref  isi  scopus
    23. Izhnin I.I., Mynbaev K.D., Voitsekhovsky A.V., Korotaev A.G., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Bonchyk A.Yu., Savytskyy H.V., Fitsych O.I., “Long-Term Stability of Electron Concentration in Hgcdte-Based P-N Junctions Fabricated With Ion Etching”, Infrared Phys. Technol., 73 (2015), 158–165  crossref  isi  elib  scopus
    24. Burlakov I.D., Dirochka A.I., Korneeva M.D., Ponomarenko V.P., Filachev A.M., “Solid state photoelectronics: the current state and new prospects”, J. Commun. Technol. Electron., 61:10 (2016), 1166–1174  crossref  isi  elib  scopus
    25. Nurullaev Yu.G., Barkhalov B.Sh., “Thermophoto-emf of hot carriers in -irradiated single crystals of Cadmium Mercury Tellurides”, High Energy Chem., 50:5 (2016), 344–348  crossref  isi  elib  scopus
    26. Talipov N.Kh., Voitsekhovskii A.V., “Ion Implantation in Narrow-Gap Cdxhg1-Xte Solid Solutions”, Russ. Phys. J., 61:6 (2018), 1005–1023  crossref  isi  scopus
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