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УФН, 2008, том 178, номер 5, страницы 459–480 (Mi ufn594)  

Эта публикация цитируется в 141 научных статьях (всего в 141 статьях)

ОБЗОРЫ АКТУАЛЬНЫХ ПРОБЛЕМ

Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок

Ю. Б. Болховитянов, О. П. Пчеляков

Институт физики полупроводников СО РАН

Аннотация: Кремний и арсенид галлия являются основными материалами современной микро- и наноэлектроники. Однако до сих пор приборы на их основе существуют раздельно на подложках Si и GaAs. Исследователи на протяжении последних более чем двадцати лет пытаются объединить эти материалы на наиболее эффективной подложке кремния. В настоящем обзоре систематизирован и обобщен достигнутый на сегодняшний день уровень понимания фундаментальных физических механизмов эпитаксиального формирования GaAs и соединений типа A$^{\mathrm{III}}$B$^{\mathrm{V}}$ на его основе на подложках Si; представлены также основные технологические приемы, способствующие улучшению качества таких гетероструктур. Освещены достижения последних лет в изготовлении гетероструктур A$^{\mathrm{III}}$B$^{\mathrm{V}}$/Si приборного качества и приборов на их основе.

DOI: https://doi.org/10.3367/UFNr.0178.200805b.0459

Полный текст: PDF файл (5834 kB)
Полный текст: http://www.ufn.ru/ru/articles/2008/5/b/
Список литературы: PDF файл   HTML файл

Англоязычная версия:
Physics–Uspekhi, 2008, 51:5, 437–456

Реферативные базы данных:

Тип публикации: Статья
PACS: 61.72.Lk, 62.25.-g, 81.05.Cy, 81.05.Ea, 81.15.-z, 85.40.Sz
Поступила: 28 ноября 2007 г.
Доработана: 9 января 2008 г.

Образец цитирования: Ю. Б. Болховитянов, О. П. Пчеляков, “Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок”, УФН, 178:5 (2008), 459–480; Phys. Usp., 51:5 (2008), 437–456

Цитирование в формате AMSBIB
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\paper Эпитаксия GaAs на кремниевых подложках: современное состояние исследований и разработок
\jour УФН
\yr 2008
\vol 178
\issue 5
\pages 459--480
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\vol 51
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    1. Putuato M.A., Bolkhovityanov Yu.B., Vasilenko A.P., Gutakovskii A.K., “Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen”, Semicond, 43:9 (2009), 1235–1239  crossref  adsnasa  isi
    2. Kang J.H., Gao Q., Joyce H.J., Tan H.H., Jagadish C., Kim Y., Choi D.Y., Guo Y., Xu H., Zou J., “Novel growth and properties of GaAs nanowires on Si substrates”, Nanotechnology, 21:3 (2010), 035604, 6 pp.  crossref  adsnasa  isi  elib  scopus
    3. Badalyan A.M., Bakhturova L.F., Kaichev V.V., Kashnikov B.P., Polyakov O.V., Pchelyakov O.P., Smirnov G.I., “Formation of thin nanostructured layers during heterogeneous gas-phase synthesis from small-size volatile metal complexes on the surface of semiconductors and dielectrics”, Tech. Phys. Lett., 36:3 (2010), 265–268  crossref  adsnasa  isi  elib  scopus
    4. Jongseung Yoon, Sungjin Jo, Ik Su Chun, Inhwa Jung, Hoon-Sik Kim, Matthew Meitl, Etienne Menard, Xiuling Li, James J. Coleman, Ungyu Paik, “GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies”, Nature (London), 465:7296 (2010), 329  crossref  isi  scopus
    5. S. Breuer, M. Hilse, A. Trampert, L. Geelhaar, H. Riechert, “Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires”, Phys Rev B, 82:7 (2010), 075406  crossref  mathscinet  adsnasa  isi  elib  scopus
    6. S. Bietti, C. Somaschini, N. Koguchi, C. Frigeri, S. Sanguinetti, “Self-Assembled Local Artificial Substrates of GaAs on Si Substrate”, Nanoscale Res Lett, 5:12 (2010), 1905–1907  crossref  adsnasa  isi  elib  scopus
    7. Steffen Breuer, Maria Hilse, Lutz Geelhaar, Henning Riechert, “Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison”, Journal of Crystal Growth, 2010  crossref  isi  scopus
    8. M. A. Putyato, B. R. Semyagin, E. A. Emel’yanov, N. A. Pakhanov, V. V. Preobrazhenskii, “Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem A III B V/Si-solar energy converters on an active silicon substrate”, Russ Phys J, 2011  crossref  isi  elib  scopus
    9. I. Miccoli, P. Prete, F. Marzo, D. Cannoletta, N. Lovergine, “Synthesis of vertically-aligned GaAs nanowires on GaAs/(111)Si hetero-substrates by metalorganic vapour phase epitaxy”, Cryst. Res. Technol, 2011, n/a  crossref  isi  scopus
    10. Deborah M. Paskiewicz, Boy Tanto, Donald E. Savage, Max G. Lagally, “Defect-Free Single-Crystal SiGe: A New Material from Nanomembrane Strain Engineering”, ACS Nano, 2011, 1106160912  crossref  isi  scopus
    11. Horie Yu., Decosterd L., Suzuki R., Ishikawa Ya., Wada K., “Emission wavelength tuning by mechanical stressing of GaAs/Ge/Si microbeams”, Optics Express, 19:17 (2011), 15732–15738  crossref  adsnasa  isi  scopus
    12. Yoon J., “Ultrathin, microscale epitaxial compound semiconductor solar cells”, Micro- and Nanotechnology Sensors, Systems, and Applications III, Proceedings of SPIE-the International Society for Optical Engineering, 8031, 2011  adsnasa  isi
    13. Кабышев А.В., Конусов Ф.В., Ремнев Г.Е., “Оптические свойства пленок gaas, осажденных импульсной ионной абляцией”, Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 2011, № 3, 27–34  elib; A. V. Kabyshev, F. V. Konusov, G. E. Remnev, “Optical properties of GaAs films deposited via pulsed ion ablation”, J. Synch. Investig, 5:2 (2011), 228  crossref  isi  scopus
    14. Коноплев Б.Г., Рындин Е.А., Денисенко М.А., “Метод построения интегральных систем оптической коммутации многоядерных убис”, Известия Южного федерального университета. Технические науки, 117:4 (2011), 21–27  elib
    15. Weixuan Hu, Buwen Cheng, Chunlai Xue, Shaojian Su, Haiyun Xue, Yuhua Zuo, Qiming Wang, “Ge-on-Si for Si-based integrated materials and photonic devices”, Front. Optoelectron. China, 5:1 (2012), 41–50  crossref  scopus
    16. Mikael T. Björk, Heinz Schmid, Chris M. Breslin, Lynne Gignac, Heike Riel, “InAs Nanowire Growth on Oxide-masked <111> Silicon”, Journal of Crystal Growth, 344:1 (2012), 31–37  crossref  adsnasa  isi  scopus
    17. Weixuan Hu, Buwen Cheng, Chunlai Xue, Shaojian Su, Zhi Liu, Yaming Li, Qiming Wang, Liangjun Wang, Jiangqing Liu, Jie Ding, Guijiang Lin, Zhidong Lin, “Epitaxy of In$_{0.01}$Ga_{$0.99}$As on Ge/offcut Si (001) virtual substrate”, Thin Solid Films, 520:16 (2012), 5361–5366  crossref  isi  scopus
    18. L. Cavigli, S. Bietti, N. Accanto, S. Minari, M. Abbarchi, G. Isella, C. Frigeri, A. Vinattieri, M. Gurioli, S. Sanguinetti, “High temperature single photon emitter monolithically integrated on silicon”, Appl. Phys. Lett, 100:23 (2012), 231112  crossref  adsnasa  isi  scopus
    19. A Biermanns, S Breuer, A Trampert, A Davydok, L Geelhaar, U Pietsch, “Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)”, Nanotechnology, 23:30 (2012), 305703  crossref  adsnasa  isi  elib  scopus
    20. Chao-Wei Hsu, Yung-Feng Chen, Yan-Kuin Su, “Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy”, Nanoscale Res Lett, 7:1 (2012), 642  crossref  adsnasa  isi  scopus
    21. Hsu Ch.-W., Chen Yu.-F., Su Ya.-K., “Nanoepitaxy of Gaas on a Si(001) Substrate Using a Round-Hole Nanopatterned Sio2 Mask”, Nanotechnology, 23:49 (2012), 495306  crossref  isi  elib  scopus
    22. Bietti S., Cavigli L., Abbarchi M., Vinattieri A., Gurioli M., Fedorov A., Cecchi S., Isa F., Isella G., Sanguinetti S., “High Quality Gaas Quantum Nanostructures Grown by Droplet Epitaxy on Ge and Ge-on-Si Substrates”, Physica Status Solidi C: Current Topics in Solid State Physics, Vol 9, No 2, Physica Status Solidi C-Current Topics in Solid State Physics, 9, no. 2, ed. Walther M., Wiley-V C H Verlag Gmbh, 2012  crossref  isi  scopus
    23. Кабышев А.В., Конусов Ф.В., Ремнев Г.Е., “Ионный абляционный синтез пленок арсенида галлия на кремниевой подложке”, Известия высших учебных заведений. физика, 55 (2012), 32–36  elib
    24. Бузынин Ю.Н., Шенгуров В.Г., Звонков Б.Н., Бузынин А.Н., Хрыкин О.И., Дроздов М.Н., Дроздов Ю.Н., Денисов С.А., “Рост и свойства пленок gaas, gan и низкоразмерных структур gaas/qws ingaas на подложках Si с буферным слоем Gе”, Известия российской академии наук. серия физическая, 76:9 (2012), 1153–1153  elib; Yu. N. Buzynin, V. G. Shengurov, B. N. Zvonkov, A. N. Buzynin, O. I. Khrykin, M. N. Drozdov, Yu. N. Drozdov, S. A. Denisov, “Growth and properties of GaAs and GaN films and low-dimensional GaAs/QWsInGaAs structures on Si substrates with a Ge buffer layer”, Bull. Russ. Acad. Sci. Phys, 76:9 (2012), 1036  crossref  elib  scopus
    25. Fonseka H.A., Tan H.H., Kang J.H., Paiman S., Gao Q., Parkinson P., Jagadish C., “Growth of Inp Nanowires on Silicon Using a Thin Buffer Layer”, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (Commad 2012), Conference on Optoelectronic and Microelectronic Materials and Devices, 2012, 43–44  mathscinet  isi
    26. Hsu Ch.-W., Chen Yu.-F., Su Ya.-K., “Nanoepitaxy of Inas on Geometric Patterned Si (001)”, ECS J. Solid State Sci. Technol., 1:3 (2012), P140–P143  crossref  adsnasa  isi  scopus
    27. Borkenhagen B., Doescher H., Hannappel T., Lilienkamp G., Daum W., “Non-Destructive, Large-Scale Imaging of Anti-Phase Disorder in Gap Epilayers on Si(001) Using Low-Energy Electron Microscopy”, Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-Cmos Applications 4, Ecs Transactions, 45, no. 4, eds. Obeng Y., Karim Z., Srinivasan P., DeGendt S., Misra D., Electrochemical Soc Inc, 2012, 231–239  crossref  isi  scopus
    28. C. Frigeri, S. Bietti, G. Isella, S. Sanguinetti, “Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge Virtual Substrates on Si”, Applied Surface Science, 267 (2013), 86–89  crossref  adsnasa  isi  scopus
    29. Емельянов Е.А., Коханенко А.П., Пчеляков О.П., Лошкарев И.Д., Селезнев В.А., Путято М.А., Семягин Б.Р., Преображенский В.В., ZHICUAN NIU, Haiqiao N.I., “Морфология поверхности и кристаллографические свойства пленок GaAs, выращенных методом млэ на вицинальных подложках Si(001)”, Известия высших учебных заведений. физика, 56:1 (2013), 49–54  elib
    30. E. A. Emelyanov, A. P. Kokhanenko, O. P. Pchelyakov, I. D. Loshkarev, V. A. Seleznev, “Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates”, Russ Phys J, 56:1 (2013), 55  crossref  isi  elib  scopus
    31. Wilkins M.M., Boucherif A., Beal R., Haysom J.E., Wheeldon J.F., Aimez V., Ares R., Hall T.J., Hinzer K., “Multijunction Solar Cell Designs Using Silicon Bottom Subcell and Porous Silicon Compliant Membrane”, IEEE J. Photovolt., 3:3 (2013), 1125–1131  crossref  isi  elib  scopus
    32. Bilel A., Ezzedini M., M'ghaieth R., Sfaxi L., Maaref H., “Relationship Between the Structural and Electronic Properties of N-Gaas Layer Grown on Rough Si Substrate by Molecular Beam Epitaxy”, Int. J. Nanotechnol., 10:5-7 (2013), 445–454  crossref  isi  elib  scopus
    33. A. V. Kabyshev, F. V. Konusov, G. E. Remnev, “Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation”, Russ Phys J, 2013  crossref  isi  scopus
    34. T. M. Burbaev, A. A. Gorbatsevich, V. I. Egorkin, I. P. Kazakov, V. P. Martovitskii, “Comprehensive study of structural and optical properties of LT-GaAs epitaxial structures”, Bull. Lebedev Phys. Inst, 40:8 (2013), 219  crossref  adsnasa  isi  elib  scopus
    35. B. G. Konoplev, E. A. Ryndin, M. A. Denisenko, “Injection laser with a functionally integrated frequency modulator based on spatially shifted quantum wells”, Tech. Phys. Lett, 39:11 (2013), 986  crossref  adsnasa  isi  scopus
    36. Bietti S., Cavigli L., Minari S., Adorno S., Isella G., Vinattieri A., Gurioli M., Sanguinetti S., “Effects of as Pressure on the Quality of Gaas/Algaas Quantum Dots Grown on Silicon by Droplet Epitaxy”, J. Cryst. Growth, 378 (2013), 497–500  crossref  adsnasa  isi  scopus
    37. Jun Wang, Can Deng, Zhi-Gang Jia, Yi-Fan Wang, Qi Wang, “Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition”, Chinese Phys. Lett, 30:11 (2013), 116801  crossref  adsnasa  isi  scopus
    38. Sergio Bietti, Andrea Scaccabarozzi, Cesare Frigeri, Monica Bollani, Emiliano Bonera, “Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale”, Appl. Phys. Lett, 103:26 (2013), 262106  crossref  isi  scopus
    39. E.H.ye Lee, J.D.ong Song, K.H.yoek Yoen, M.H.wan Bae, H.J.i Oh, “Formation of Al0.3Ga0.7As/GaAs Multiple Quantum Wells on Silicon Substrate with AlAsxSb1-xStep-graded Buffer”, Journal of the Korean Vacuum Society, 22:6 (2013), 313  crossref
    40. A.A.. Shklyaev, K.N.. Romanyuk, A.V.. Latyshev, “Epitaxial Ge Growth on Si(111) Covered with Ultrathin SiO<sub>2</sub> Films”, JSEMAT, 03:03 (2013), 195  crossref
    41. S.W. Kim, Y.D. Cho, C.S. Shin, W.K. Park, D.H. Kim, “Defect analyses of selective epitaxial grown GaAs in STI patterned (001) Si substrates”, Journal of Crystal Growth, 2014  crossref  isi  scopus
    42. Dante DeMeo, Corey Shemelya, Chandler Downs, Abigail Licht, E.S.alih Magden, “GaSb Thermophotovoltaic Cells Grown on GaAs Substrate Using the Interfacial Misfit Array Method”, Journal of Elec Materi, 2014  crossref  isi  scopus
    43. V. K. Dixit, Shailendra Kumar, S. D. Singh, S. K. Khamari, R. Kumar, “Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure”, Appl. Phys. Lett, 104:9 (2014), 092101  crossref  adsnasa  isi  isi  scopus
    44. Conesa-Boj S., Kriegner D., Han X.-L., Plissard S., Wallart X., Stangl J., Fontcuberta i Morral A., Caroff Ph., “Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free Down to the First Bilayer”, Nano Lett., 14:1 (2014), 326–332  crossref  adsnasa  isi  scopus
    45. Asthana P.K., Ghosh B., Goswami Y., Tripathi Ball Mukund Mani, “High-Speed and Low-Power Ultradeep-Submicrometer III-V Heterojunctionless Tunnel Field-Effect Transistor”, IEEE Trans. Electron Devices, 61:2, SI (2014), 479–486  crossref  isi  scopus
    46. M.S.. Polyakov, A.M.. Badalyan, V.V.. Kaichev, I.K.. Igumenov, “Thermal- and Plasma-Enhanced Copper Film Deposition via a Combined Synthesis-Transport CVD Technique”, Chem. Vap. Deposition, 2014, n/a  crossref  isi  scopus
    47. M.H.erminia Balgos, Rafael Jaculbia, Michael Defensor, J.P.auline Afalla, J.J.ohn Ibañes, “Shell to core carrier-transfer in MBE-grown GaAs/AlGaAs core-shell nanowires on si(100) substrates”, Journal of Luminescence, 2014  crossref  isi  scopus
    48. H. Zheng, K. Jagannadham, “Self heating in Si0.5Ge0.5/Si and GaAs/Si thin film device structures”, Solid-State Electronics, 99 (2014), 41  crossref  isi  scopus
    49. Е. А. Emel'yanov, А. P. Kokhanenko, D. S. Abramkin, O. P. Pchelyakov, М. А. Putyato, “InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates”, Russ Phys J, 2014  crossref  scopus
    50. E. A. Emelyanov, D. F. Feklin, M. A. Putyato, B. R. Semyagin, A. K. Gutakovskii, “Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates”, Optoelectron.Instrument.Proc, 50:3 (2014), 224  crossref  scopus
    51. A. V. Kolesnikov, E. M. Trukhanov, A. S. Ilin, I. D. Loshkarev, “The role of misfit dislocations in tilt boundary formation in heterosystems with nonsingular orientations”, J. Synch. Investig, 8:4 (2014), 647  crossref  scopus
    52. T. Ward, A. M. Sánchez, M. Tang, J. Wu, H. Liu, “Design rules for dislocation filters”, J. Appl. Phys, 116:6 (2014), 063508  crossref  isi  scopus
    53. Yingchang Jiang, Shudong Zhang, Jian Zhang, Zhongping Zhang, Zhenyang Wang, “Inducing nucleation and growth of chalcogenide nanostructures on silicon wafers”, CrystEngComm, 16:38 (2014), 8977  crossref  isi  scopus
    54. Lei Wen, Fangliang Gao, Xiaona Zhang, Shuguang Zhang, Jingling Li, “Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy”, J. Appl. Phys, 116:19 (2014), 193508  crossref  isi  scopus
    55. A. V. Kabyshev, F. V. Konusov, G. E. Remnev, S. K. Pavlov, “Influence of the high-intensity short-pulse implantation of ions on the properties of polycrystalline silicon”, J. Synch. Investig, 8:6 (2014), 1168  crossref  scopus
    56. В. Я. Алешкин, Н. В. Дикарева, А. А. Дубинов, С. А. Денисов, З. Ф. Красильник, К. Е. Кудрявцев, С. А. Матвеев, С. М. Некоркин, В. Г. Шенгуров, “Стимулированное излучение из InGaAs/GaAs/AlGaAs гетероструктуры, выращенной на Si подложке”, Письма в ЖЭТФ, 100:12 (2014), 900–903  mathnet  crossref  elib; V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, S. A. Denisov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. A. Matveev, S. M. Nekorkin, V. G. Shengurov, “Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate”, JETP Letters, 100:12 (2014), 795–797  crossref  isi  elib
    57. Scaccabarozzi A., Bietti S., Fedorov A., von Kaenel H., Miglio L., Sanguinetti S., “Photoluminescence Study of the Strain Relaxation of Gaas Crystals Grown on Deeply Patterned Si Substrates”, J. Cryst. Growth, 401 (2014), 559–562  crossref  isi  scopus
    58. Polyakov M.S. Badalyan A.M. Kaichev V.V. Igumenov I.K., “a Novel Plasma-Chemical Process of Metallic Layer Deposition From Small-Size Volatile Metal Complexes”, Materials Research and Applications, Pts 1-3, Advanced Materials Research, 875-877, ed. Li D. Zheng D. Shi J., Trans Tech Publications Ltd, 2014, 246–250  crossref  isi  scopus
    59. Jun Wang, Hai-Yang Hu, Can Deng, Yun-Rui He, Qi Wang, “Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition”, Chinese Phys. B, 24:2 (2015), 028101  crossref  isi  scopus
    60. Mingwen Zhao, Xin Chen, Linyang Li, Xiaoming Zhang, “Driving a GaAs film to a large-gap topological insulator by tensile strain”, Sci. Rep, 5 (2015), 8441  crossref  isi  scopus
    61. Qiang Li, K.W.ei Ng, K.M.ay Lau, “Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon”, Appl. Phys. Lett, 106:7 (2015), 072105  crossref  isi  scopus
    62. Fangliang Gao, Lei Wen, Xiaona Zhang, Yunfang Guan, Jingling Li, “Structural properties of In0.53Ga0.47As epitaxial films grown on Si (111) substrates by molecular beam epitaxy”, Thin Solid Films, 2015  crossref  isi  scopus
    63. Yunrui He, Jun Wang, Haiyang Hu, Qi Wang, Yongqing Huang, “Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth”, Appl. Phys. Lett, 106:20 (2015), 202105  crossref  isi  scopus
    64. P.V. Seredin, A.S. Lenshin, V.M. Kashkarov, A.N. Lukin, I.N. Arsentiev, “Ultrathin nano-sized Al2O3 strips on the surface of por-Si”, Materials Science in Semiconductor Processing, 39 (2015), 551  crossref  isi  scopus
    65. P. V. Seredin, A. S. Lenshin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsentyev, “Investigations of nanodimensional Al2O3 films deposited by ion-plasma sputtering onto porous silicon”, Semiconductors, 49:7 (2015), 915  crossref  isi  scopus
    66. Tommaso Orzali, Alexey Vert, Tae-Woo Kim, P.Y. Hung, J.L.. Herman, “Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD”, Journal of Crystal Growth, 2015  crossref  isi  scopus
    67. V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, K. E. Kudryavtsev, “The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer”, Tech. Phys. Lett, 41:7 (2015), 648  crossref  isi  scopus
    68. Michael Rienäcker, Benjamin Borkenhagen, Gerhard Lilienkamp, Winfried Daum, “Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study”, J. Appl. Phys, 118:5 (2015), 055701  crossref  isi  scopus
    69. Jun Wang, Hai-Yang Hu, Yun-Rui He, Can Deng, Qi Wang, “Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition”, Chinese Phys. Lett, 32:8 (2015), 088101  crossref  isi  scopus
    70. A. Jung, A. G. Taboada, W. Stumpf, T. Kreiliger, F. Isa, “Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates”, J. Appl. Phys, 118:7 (2015), 075701  crossref  isi  scopus
    71. Bogumilowicz Y., Hartmann J.M., Cipro R., Alcotte R., Martin M., Bassani F., Moeyaert J., Baron T., Pin J.B., Bao X., Ye Z., Sanchez E., “Anti-Phase Boundaries-Free Gaas Epilayers on “Quasi-Nominal” Ge-Buffered Silicon Substrates”, Appl. Phys. Lett., 107:21 (2015), 212105-1  crossref  isi
    72. Bhatnagar K., Caro M.P., Rojas-Ramirez J.S., Droopad R., Thomas P.M., Gaur A., Filmer M.J., Rommel S.L., “Integration of Broken-Gap Heterojunction Inas/Gasb Esaki Tunnel Diodes on Silicon”, J. Vac. Sci. Technol. B, 33:6 (2015), 062203  crossref  isi  scopus
    73. George I., Becagli F., Liu H.Y., Wu J., Tang M., Beanland R., “Dislocation Filters in Gaas on Si”, Semicond. Sci. Technol., 30:11 (2015), 114004  crossref  isi  scopus
    74. Yurasov D.V., Bobrov A.I., Daniltsev V.M., Novikov A.V., Pavlov D.A., Skorokhodov E.V., Shaleev M.V., Yunin P.A., “Impact of Growth and Annealing Conditions on the Parameters of Ge/Si(001) Relaxed Layers Grown By Molecular Beam Epitaxy”, Semiconductors, 49:11 (2015), 1415–1420  crossref  isi  scopus
    75. Gomes U.P., Ercolani D., Sibirev N.V., Gemmi M., Dubrovskii V.G., Beltram F., Sorba L., “Catalyst-Free Growth of Inas Nanowires on Si (111) By Cbe”, Nanotechnology, 26:41 (2015), 415604  crossref  isi  scopus
    76. Orzali T., Vert A., O'Brien B., Herman J.L., Vivekanand S., Hill R.J.W., Karim Z., Rao S.S.P., “Gaas on Si Epitaxy By Aspect Ratio Trapping: Analysis and Reduction of Defects Propagating Along the Trench Direction”, J. Appl. Phys., 118:10 (2015), 105307  crossref  isi  scopus
    77. Wang J., Ren X., Deng C., Hu H., He Yu., Cheng Zh., Ma H., Wang Q., Huang Y., Duan X., Yan X., “Extremely Low-Threshold Current Density Ingaas/Algaas Quantum-Well Lasers on Silicon”, J. Lightwave Technol., 33:15 (2015), 3163–3169  crossref  isi  scopus
    78. Almansouri I., Bremner S., Ho-Baillie A., Mehrvarz H., Hao X., Conibeer G., Grassman T.J., Carlin J.A., Haas A., Ringel S.A., Green M.A., “Designing Bottom Silicon Solar Cells For Multijunction Devices”, IEEE J. Photovolt., 5:2 (2015), 683–690  crossref  isi  scopus
    79. Almansouri I., Bremner S., Ho-Baillie A., Green M.A., “Potential Performance of “Out-of-Sequence” Multi-Junction Solar Cells: III-Von Virtual Ge Substrates With Active Si Bottom Sub-Cell”, 2015 IEEE 42Nd Photovoltaic Specialist Conference (Pvsc), IEEE Photovoltaic Specialists Conference, IEEE, 2015  isi
    80. Petrushkov M.O., Putyato M.A., Preobrazhenskii V.V., Semyagin B.R., Emelyanov E.A., “Gaas Mbe on Vicinal Substrates Si (001): Impact of Nucleation and Growth Conditions on Crystallographic Properties of the Epitaxial Layers”, 2015 16Th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, International Conference and Seminar of Young Specialists on Micro-Nanotechnologies and Electron Devices, IEEE, 2015, 61–64  isi
    81. Rodriguez J.B., Madiomanana K., Cerutti L., Castellano A., Tournie E., “X-Ray Diffraction Study of Gasb Grown By Molecular Beam Epitaxy on Silicon Substrates”, J. Cryst. Growth, 439 (2016), 33–39  crossref  isi  scopus
    82. Yao M., Sheng Ch., Ge M., Chi Ch.-Yu., Cong S., Nakano A., Dapkus P.D., Zhou Ch., “Facile Five-Step Heteroepitaxial Growth of Gaas Nanowires on Silicon Substrates and the Twin Formation Mechanism”, ACS Nano, 10:2 (2016), 2424–2435  crossref  isi  scopus
    83. Bergamaschini R., Salvalaglio M., Backofen R., Voigt A., Montalenti F., “Continuum modelling of semiconductor heteroepitaxy: an applied perspective”, Adv. Phys.-X, 1:3 (2016), 331–367  crossref  isi  scopus
    84. Liu Guang-Zheng, Xu Bo, Ye Xiao-Ling, Liu Feng-Qi, Wang Zhan-Guo, “Four-step Method for Growing High-quality GaAs Films on Si Substrate by Molecular Beam Epitaxy”, J. Inorg. Mater., 31:11 (2016), 1263–1268  crossref  isi  scopus
    85. Kumar R., Dixit V.K., Ganguli T., Mukherjee C., Srivastava A.K., Sharma T.K., “Observation of anisotropic distribution of microstructure in GaP/GaAs epitaxial layers”, J. Appl. Phys., 120:13 (2016), 135307  crossref  isi  scopus
    86. Heidelberger Ch., Fitzgerald E., “Y Heavy P-Type Carbon Doping of Mocvd Gaasp Using Cbrcl3”, J. Cryst. Growth, 446 (2016), 7–11  crossref  isi  elib
    87. Cariou R., Chen W., Maurice J.-L., Yu J., Patriarche G., Mauguin O., Largeau L., Decobert J., Roca i Cabarrocas P., “Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration”, Sci Rep, 6 (2016), 25674  crossref  isi  elib  scopus
    88. Yablonsky A.N., Morozov S.V., Gaponova D.M., Aleshkin V.Ya., Shengurov V.G., Zvonkov B.N., Vikhrova O.V., Baidus' N. V., Krasil'nik Z.F., “Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates”, Semiconductors, 50:11 (2016), 1435–1438  crossref  isi  scopus
    89. Bogumilowicz Y., Hartmann J.M., Rochat N., Salaun A., Martin M., Bassani F., Baron T., David S., Bao X.-Y., Sanchez E., “Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300mm Si substrates”, J. Cryst. Growth, 453 (2016), 180–187  crossref  isi  elib  scopus
    90. Aleshkin V.Ya., Baidus N.V., Dubinov A.A., Fefelov A.G., Krasilnik Z.F., Kudryavtsev K.E., Nekorkin S.M., Novikov A.V., Pavlov D.A., Samartsev I.V., Skorokhodov E.V., Shaleev M.V., Sushkov A.A., Yablonskiy A.N., Yunin P.A., Yurasov D.V., “Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate”, Appl. Phys. Lett., 109:6 (2016), 061111  crossref  isi  elib  scopus
    91. Seel A., Davtyan A., Pietsch U., Loffeld O., “Norm-Minimized Scattering Data From Intensities”, 2016 International Conference on Communications (Comm 2016), International Conference on Communications (Icc), IEEE, 2016, 455–460  isi
    92. Boulanger J.P., Chia A.C.E., Wood B., Yazdi S., Kasama T., Aagesen M., LaPierre R.R., “Characterization of a Ga-Assisted GaAs Nanowire Array Solar Cell on Si Substrate”, IEEE J. Photovolt., 6:3 (2016), 661–667  crossref  isi  elib  scopus
    93. Garcia-Tabares E., Carlin J.A., Grassman T.J., Martin D., Rey-Stolle I., Ringel S.A., “Evolution of silicon bulk lifetime during III-V-on-Si multijunction solar cell epitaxial growth”, Prog. Photovoltaics, 24:5 (2016), 634–644  crossref  isi  elib  scopus
    94. Vasil'evskii I.S., Pushkarev S.S., Grekhov M.M., Vinichenko A.N., Lavrukhin D.V., Kolentsova O.S., “Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the -scanning mode”, Semiconductors, 50:4 (2016), 559–565  crossref  isi  scopus
    95. Seel A., Davtyan A., Pietsch U., Loffeld O., “Norm-Minimized Scattering Data from Intensity Spectra”, Math. Probl. Eng., 2016, 9853714  crossref  mathscinet  isi  elib  scopus
    96. Bendayan M., Karsenty A., Chelly A., “Modeling and Simulations of Mosqwell Transistor Future Building Block For Optical Communication”, 2016 IEEE International Conference on the Science of Electrical Engineering (Icsee), IEEE, 2016  isi
    97. Niehle M., Trampert A., Rodriguez J.-B., Cerutti L., Tournie E., “Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations”, Scr. Mater., 132 (2017), 5–8  crossref  isi  scopus
    98. Baba M., Makita K., Mizuno H., Takato H., Sugaya T., Yamada N., “Feasibility study of two-terminal tandem solar cells integrated with smart stack, areal current matching, and low concentration”, Prog. Photovoltaics, 25:3 (2017), 255–263  crossref  isi  scopus
    99. Prieto I., Kozak R., Skibitzki O., Rossell M.D., Zaumseil P., Capellini G., Gini E., Kunze K., Dasilva Yadira Arroyo Rojas, Erni R., Schroeder T., von Kanel H., “Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy”, Nanotechnology, 28:13 (2017), 135701  crossref  isi  scopus
    100. Loshkarev I.D., Vasilenko A.P., Trukhanov E.M., Kolesnikov A.V., Putyato M.A., Esin M.Yu., Petrushkov M.O., “The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates”, Tech. Phys. Lett., 43:2 (2017), 213–215  crossref  isi  scopus
    101. Cariou R., Benick J., Beutel P., Razek N., Floetgen Ch., Hermle M., Lackner D., Glunz S.W., Bett A.W., Wimplinger M., Dimroth F., “Monolithic Two-Terminal III–V//Si Triple-Junction Solar Cells With 30.2”, IEEE J. Photovolt., 7:1 (2017), 367–373  crossref  isi  scopus
    102. Prieto I., Kozak R., Skibitzki O., Rossell M.D., Schroeder T., Erni R., Kaenel H.v., “Selective Nucleation of Gaas on Si Nanofacets”, Small, 13:22 (2017), UNSP 1603122  crossref  isi  scopus
    103. Bendayan M., Sabo R., Zolberg R., Mandelbaum Ya., Chelly A., Karsenty A., “Dual-Mode Mos Soi Nanoscale Transistor Serving as a Building Block For Optical Communication Between Blocks”, Photonic and Phononic Properties of Engineered Nanostructures Vii, Proceedings of Spie, 10112, eds. Adibi A., Lin S., Scherer A., Spie-Int Soc Optical Engineering, 2017, UNSP 101122A-1  crossref  isi  scopus
    104. Lee E., Luo T., “the Role of Optical Phonons in Intermediate Layer-Mediated Thermal Transport Across Solid Interfaces”, Phys. Chem. Chem. Phys., 19:28 (2017), 18407–18415  crossref  isi  scopus
    105. Minh Thien Huu Ha, Sa Hoang Huynh, Huy Binh Do, Tuan Anh Nguyen, Quang Ho Luc, Chang E.Y., “Demonstrating Antiphase Domain Boundary-Free Gaas Buffer Layer on Zero Off-Cut Si (001) Substrate For Interfacial Misfit Dislocation Gasb Film By Metalorganic Chemical Vapor Deposition”, Mater. Res. Express, 4:8 (2017), 085901  crossref  isi  scopus
    106. Kozak R., Kurdzesau F., Prieto I., Skibitzki O., Schroeder T., Dasilva Yadira Arroyo Rojas, Erni R., von Kaenel H., Rossell M.D., “a Tool For Automatic Recognition of [110] Tilt Grain Boundaries in Zincblende-Type Crystals”, J. Appl. Crystallogr., 50:5 (2017), 1299–1306  crossref  isi  scopus
    107. Bendayan M., Sabo R., Zolberg R., Mandelbaum Ya., Chelly A., Karsenty A., “Electrical Control Simulation of Near Infrared Emission in Soi-Mosfet Quantum Well Devices”, J. Nanophotonics, 11:3 (2017), 036016  crossref  isi  scopus
    108. Youngblood N., Li M., “Integration of 2D Materials on a Silicon Photonics Platform For Optoelectronics Applications”, Nanophotonics, 6:6, SI (2017), 1205–1218  crossref  isi  scopus
    109. Jung D., Callahan P.G., Shin B., Mukherjee K., Gossard A.C., Bowers J.E., “Low Threading Dislocation Density Gaas Growth on on-Axis Gap/Si (001)”, J. Appl. Phys., 122:22 (2017), 225703  crossref  isi  scopus
    110. Qiang L., May L.K., “Epitaxial Growth of Highly Mismatched III-V Materials on (001) Silicon For Electronics and Optoelectronics”, Prog. Cryst. Growth Charact. Mater., 63:4 (2017), 105–120  crossref  mathscinet  isi  scopus
    111. Schlipf J., Frieiro J.L., Fischer I.A., Serra C., Schulze J., Chiussi S., “Growth of Patterned Gesn and Gepb Alloys By Pulsed Laser Induced Epitaxy”, 2017 40Th International Convention on Information and Communication Technology, Electronics and Microelectronics (Mipro), eds. Biljanovic P., Koricic M., Skala K., Grbac T., CicinSain M., Sruk V., Ribaric S., Gros S., Vrdoljak , IEEE, 2017, 37–42  crossref  isi
    112. Niehle M., Rodriguez J.-B., Cerutti L., Tournie E., Trampert A., “On the Origin of Threading Dislocations During Epitaxial Growth of III-Sb on Si(001): a Comprehensive Transmission Electron Tomography and Microscopy Study”, Acta Mater., 143 (2018), 121–129  crossref  isi  scopus
    113. Seredin P.V., Lenshin A.S., Zolotukhin D.S., Arsentyev I.N., Nikolaev D.N., Zhabotinskiy A.V., “Experimental Study of Structural and Optical Properties of Integrated Mocvd Gaas/Si(001) Heterostructures”, Physica B, 530 (2018), 30–37  crossref  isi  scopus
    114. Hu H., Wang J., Cheng Zh., Yang Z., Yin H., Fan Y., Ma X., Huang Y., Ren X., “Influences of Ultrathin Amorphous Buffer Layers on Gaas/Si Grown By Metal-Organic Chemical Vapor Deposition”, Appl. Phys. A-Mater. Sci. Process., 124:4 (2018), 296  crossref  isi
    115. Kim Y., Kim K., Lee J., Kim Ch.Z., Kang H.K., Park W.-K., “Epitaxial Ge Solar Cells Directly Grown on Si (001) By Mocvd Using Isobutylgermane”, J. Korean Phys. Soc., 72:5 (2018), 633–638  crossref  isi  scopus
    116. Chen Y.-H., Jheng J.-W., Mishra P., Lin Ch.-Yu., Lee M.-Ch.M., “Gasb Msm Photodetectors on Si Waveguides By Rapid Melt Growth Method”, IEEE Photonics Technol. Lett., 30:11 (2018), 1013–1015  crossref  isi  scopus
    117. Cariou R., Benick J., Feldmann F., Hohn O., Hauser H., Beutel P., Razek N., Wimplinger M., Blasi B., Lackner D., Hermle M., Siefer G., Glunz S.W., Bett A.W., Dimroth F., “III-V-on-Silicon Solar Cells Reaching 33% Photoconversion Efficiency in Two-Terminal Configuration”, Nat. Energy, 3:4 (2018), 326–333  crossref  isi  scopus
    118. Yako M., Ishikawa Ya., Wada K., “Coalescence Induced Dislocation Reduction in Selectively Grown Lattice-Mismatched Heteroepitaxy: Theoretical Prediction and Experimental Verification”, J. Appl. Phys., 123:18 (2018), 185304  crossref  isi  scopus
    119. Abramkin D.S., Petrushkov M.O., Emel'yanov E.A., Putyato M.A., Semyagin B.R., Vasev A.V., Esin M.Yu., Loshkarev I.D., Gutakovskii A.K., Preobrazhenskii V.V., Shamirzaev T.S., “Influence of a Low-Temperature Gaas Dislocation Filter on the Perfection of Gaas/Si Layers”, Optoelectron. Instrum. Data Proc., 54:2 (2018), 181–186  crossref  isi  scopus
    120. Vahanka H., Purohit Z., Tripathi B., “Modeling of Four-Terminal Solar Photovoltaic Systems For Field Application”, International Conference on Nanomaterials For Energy Conversion and Storage Applications (Necsa 2018), AIP Conference Proceedings, 1961, eds. Mukhopadhyay I., Ray A., Pati R., Amer Inst Physics, 2018, UNSP 030035  crossref  isi  scopus
    121. Kozak R., Prieto I., Dasilva Yadira Arroyo Rojas, Erni R., von Kaenel H., Bona G.-L., Rossell M.D., “A Comparative Study of Defect Formation in Gaas Nanocrystals Selectively Grown on Nanopatterned and Flat Si(001) Substrates”, Micron, 113 (2018), 83–90  crossref  isi  scopus
    122. Kumar R., Dixit V.K., Sharma T.K., “Anisotropic Distribution of Dislocations Density in Tensile Strained Gap/Gaas Epilayers”, Vacuum, 154 (2018), 214–217  crossref  isi  scopus
    123. Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Lukin A.N., Khudyakov Yu.Yu., Arsentyev I.N., Zhabotinsky A.V., Nikolaev D.N., Pikhtin N.A., “Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated Gaas/Si(100) Heterostructures Produced By Vapor Phase Epitaxy”, Semiconductors, 52:8 (2018), 1012–1021  crossref  isi  scopus
    124. Abramkin D.S., Petrushkov M.O., Putyato M.A., Semyagin B.R., Shamirzaev T.S., “Heterostructures With Inas/Alas Quantum Wells and Quantum Dots Grown on Gaas/Si Hybrid Substrates”, Semiconductors, 52:11 (2018), 1484–1490  crossref  isi  scopus
    125. Kumar R., Dixit V.K., Mukherjee C., Sharma T.K., “Anisotropic Distribution of Microstructure in Compressively Strained Inp/Gaas Epitaxial Layers”, Superlattices Microstruct., 122 (2018), 636–642  crossref  isi  scopus
    126. Xue H., Wang Ya., Dai Yu., Kim W., Ussila H., Qi M., Susoma A., Ren Zh., Dai Q., Zhao J., Holonen K., Lipsanen H., Wang X., Gan X., Sun Zh., “A Mose2/Wse2 Heterojunction-Based Photodetector At Telecommunication Wavelengths”, Adv. Funct. Mater., 28:47 (2018), 1804388  crossref  isi  scopus
    127. Feifel M., Ohlmann J., Benick J., Hermle M., Belz J., Beyer A., Volz K., Hannappel T., Bett A.W., Lackner D., Dimroth F., “Direct Growth of III-V/Silicon Triple-Junction Solar Cells With 19.7% Efficiency”, IEEE J. Photovolt., 8:6 (2018), 1590–1595  crossref  isi  scopus
    128. Afalla J., Cedric Gonzales K., Muldera J., Ann Prieto E., Catindig G., Daniel Vasquez J., Husay H.A., Moriyasu T., Kitahara H., Bulgarevich D., Mag-usara V., Furuya T., Somintac A., Salvador A., Estacio E., Tani M., 2018 43Rd International Conference on Infrared, Millimeter, and Terahertz Waves (Irmmw-Thz), International Conference on Infrared Millimeter and Terahertz Waves, IEEE, 2018  isi
    129. Tournie E., Rodriguez J.-B., Cerutti L., Teissier R., Baranov A.N., “Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si”, Silicon Photonics, Semicond. Sdemimet., Semiconductors and Semimetals, 99, eds. Lourdudoss S., Chen R., Jagadish C., Elsevier Academic Press Inc, 2018, 1–25  crossref  isi  scopus
    130. Supplie O., Romanyuk O., Koppka Ch., Steidl M., Naegelein A., Paszuk A., Winterfeld L., Dobrich A., Kleinschmidt P., Runge E., Hannappel T., “Metalorganic Vapor Phase Epitaxy of III V-on-Silicon: Experiment and Theory”, Prog. Cryst. Growth Charact. Mater., 64:4 (2018), 103–132  crossref  isi
    131. Wang Yu.-C., Yamamoto A., Kojima N., Ohshita Y., Yamaguchi M., “Low-Temperature Grown Gallium Arsenide on Silicon By Using Migration-Enhanced Epitaxy”, 2018 IEEE 7Th World Conference on Photovoltaic Energy Conversion (Wcpec) (a Joint Conference of 45Th IEEE Pvsc, 28Th Pvsec & 34Th Eu Pvsec), World Conference on Photovoltaic Energy Conversion Wcpec, IEEE, 2018, 0264–0267  isi
    132. Tournet J., Parola S., Vauthelin A., Cardenes D.M., Soresi S., Martinez F., Lu Q., Cuminal Y., Carrington P.J., Decobert J., Krier A., Rouillard Y., Tournie E., “Gasb-Based Solar Cells For Multi Junction Integration on Si Substrates”, Sol. Energy Mater. Sol. Cells, 191 (2019), 444–450  crossref  isi  scopus
    133. Yeu I.W., Han G., Park J., Hwang Ch.S., Choi J.-H., “Equilibrium Crystal Shape of Gaas and Inas Considering Surface Vibration and New (111)B Reconstruction: Ab-Initio Thermodynamics”, Sci Rep, 9 (2019), 1127  crossref  isi  scopus
    134. Afalla J., Cedric Gonzales K., Ann Prieto E., Catindig G., Daniel Vasquez J., Andrew Husay H., Agatha Tumanguil-Quitoras M., Muldera J., Kitahara H., Somintac A., Salvador A., Estacio E., Tani M., “Photoconductivity, Carrier Lifetime and Mobility Evaluation of Gaas Films on Si (100) Using Optical Pump Terahertz Probe Measurements”, Semicond. Sci. Technol., 34:3 (2019), 035031  crossref  isi  scopus
    135. Kwoen J., Lee J., Watanabe K., Arakawa Ya., “Elimination of Anti-Phase Boundaries in a Gaas Layer Directly-Grown on An on-Axis Si(001) Substrate By Optimizing An Algaas Nucleation Layer”, Jpn. J. Appl. Phys., 58:SB, S (2019), SBBE07  crossref  isi  scopus
    136. Nakahara M., Matsubara M., Suzuki Sh., Fukami Sh., Dhamrin M., Usami N., “Fabrication of Si1-Xgex Layer on Si Substrate By Screen-Printing”, MRS Adv., 4:13 (2019), 749–754  crossref  isi  scopus
    137. Han Yu., Xue Y., Lau K.M., “Selective Lateral Epitaxy of Dislocation-Free Inp on Silicon-on-Insulator”, Appl. Phys. Lett., 114:19 (2019), 192105  crossref  isi
    138. Shi B., Wang L., Taylor A.A., Brunelli S.S., Zhao H., Song B., Klamkin J., “Mocvd Grown Low Dislocation Density Gaas-on-V-Groove Patterned (001) Si For 1.3 Mu M Quantum Dot Laser Applications”, Appl. Phys. Lett., 114:17 (2019), UNSP 172102  crossref  isi
    139. Frank-Rotsch Ch., Dropka N., Rotsch P., “III Arsenide”, Single Crystals of Electronic Materials: Growth and Properties, Woodhead Publishing Series in Electronic and Optical Materials, ed. Fornari R., Woodhead Publ Ltd, 2019, 181–240  crossref  isi
    140. Bioud Y.A., Beattie M.N., Boucherif A., Jellit M., Stricher R., Ecoffey S., Patriarche G., Troadec D., Soltani A., Braidy N., Wilkins M., Valdivia Ch.E., Hinzer K., Drouin D., Ares R., “A Porous Ge/Si Interface Layer For Defect-Free III-V Multi-Junction Solar Cells on Silicon”, Proceedings of Spie, 10913, eds. Freundlich A., Lombez L., Sugiyama M., Spie-Int Soc Optical Engineering, 2019, UNSP 109130T  crossref  isi
    141. Ha Minh Thien Huu, Huynh S.H., Do H.B., Lee Ch.T., Luc Q.H., Chang E.Y., “The Effect of a and Ga Intermediate Layer on the Interfacial Layer Properties of Epitaxial Gasb on Gasb Grown By Metalorganic Chemical Vapor Deposition”, Thin Solid Films, 669 (2019), 430–435  crossref  isi
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