RUS  ENG JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PERSONAL OFFICE
General information
Latest issue
Forthcoming papers
Archive
Impact factor
Subscription
Guidelines for authors
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



UFN:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


UFN, Forthcoming paper (Mi ufn6301)  

REVIEWS OF TOPICAL PROBLEMS

Two-dimensional system of strongly interacting electrons in silicon (100) structures

V. T. Dolgopolov

Institute of Solid State Physics Russian Academy of Sciences, Chernogolovka, Moscow region

Abstract: The aim of the review is to describe and critically analyze the work of various experimental groups that studied the properties of a two-dimensional electron gas in silicon semiconductor systems ( (100) Si-MOSFET and (100) SiGe / Si / SiGe quantum wells) in the vicinity of the metal-insulator transition. The results are general for all researchers: (i) the effective mass of electrons measured at the Fermi level in the metalic region increases with decreasing concentration and, by extrapolation, tends to divergence; (ii) the average mass in the metalic region behaves differently in the two systems studied: in Si-MOSFET , it also shows a tendency to divergence, in the SiGe / Si / SiGe quantum wells - saturates in the region of minimum concentrations; (iii) in the metallic phase, there is a small (depending on the quality of the sample) amount of localized electrons; (iv) in the insulator phase, in the vicinity of the metal-insulator transition, the electron system exhibits properties typical of amorphous media with a strong interaction between particles.

Funding Agency Grant Number
Russian Foundation for Basic Research РФФИ 18-02-00368


DOI: https://doi.org/10.3367/UFNr.2018.10.038449


English version:
Physics–Uspekhi, 2019, 62

Document Type: Article
Received: April 28, 2018
Revised: October 7, 2018
Accepted: October 16, 2018

Linking options:
  • http://mi.mathnet.ru/eng/ufn6301

    SHARE: VKontakte.ru FaceBook Twitter Mail.ru Livejournal Memori.ru


    Citing articles on Google Scholar: Russian citations, English citations
    Related articles on Google Scholar: Russian articles, English articles
  • Успехи физических наук Physics-Uspekhi
    Number of views:
    This page:9

     
    Contact us:
     Terms of Use  Registration  Logotypes © Steklov Mathematical Institute RAS, 2019