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UFN, 2009, Volume 179, Number 4, Pages 359–368 (Mi ufn749)  

This article is cited in 30 scientific papers (total in 30 papers)


Spintronics: exchange switching of ferromagnetic metallic junctions under low current density

Yu. V. Gulyaeva, P. E. Zil'bermanb, A. I. Panasb, E. M. Epshteinb

a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow region

Abstract: A review is given on the exchange switching of ferromagnetic metallic junctions under low threshold current. A dramatic (orders of magnitude) threshold current reduction is achieved under conditions which include the dominance of the current-driven nonequilibrium spin injection, the optimum relation between the spin resistances of the layers, and the application of an external magnetic field near the point of the reorientational phase transition.


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English version:
Physics–Uspekhi, 2009, 52:4, 335–343

Bibliographic databases:

Document Type: Article
PACS: 72.25.Ba, 72.25.Hg, 75.47.-m
Received: November 5, 2008

Citation: Yu. V. Gulyaev, P. E. Zil'berman, A. I. Panas, E. M. Epshtein, “Spintronics: exchange switching of ferromagnetic metallic junctions under low current density”, UFN, 179:4 (2009), 359–368; Phys. Usp., 52:4 (2009), 335–343

Citation in format AMSBIB
\by Yu.~V.~Gulyaev, P.~E.~Zil'berman, A.~I.~Panas, E.~M.~Epshtein
\paper Spintronics: exchange switching of ferromagnetic metallic junctions under low current density
\jour UFN
\yr 2009
\vol 179
\issue 4
\pages 359--368
\jour Phys. Usp.
\yr 2009
\vol 52
\issue 4
\pages 335--343

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    4. M. B. Belonenko, N. G. Lebedev, A. V. Pak, “Specific features of indirect interaction in an impurity graphene bilayer in the framework of the s-d model”, Phys. Solid State, 53:8 (2011), 1689  crossref  adsnasa  isi  elib  scopus
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