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 Num. Meth. Prog., 2011, Volume 12, Issue 1, Pages 97–102 (Mi vmp173)

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Numerical study of stability for weighted finite difference schemes in transient process simulation in diode power semiconductor structures

S. A. Mesheryakov

Research Institute of Technical Information Security

Abstract: Stability of weighted finite difference schemes used to simulate the drift diffusion thermal transient processes in diode power semiconductor structures is studied with consideration of parasitic and load elements. It is shown that the finite difference scheme for the continuity equation might be unstable with an oscillating behavior of the solution in a wide range of the time step for the weight values between 0.5 and 0.7.

Keywords: simulation; finite difference; numerical methods; semiconductor devices; continuity equation; diffusion; drift.

Full text: PDF file (307 kB)
UDC: 519.63, 621.382

Citation: S. A. Mesheryakov, “Numerical study of stability for weighted finite difference schemes in transient process simulation in diode power semiconductor structures”, Num. Meth. Prog., 12:1 (2011), 97–102

Citation in format AMSBIB
\Bibitem{Mes11} \by S.~A.~Mesheryakov \paper Numerical study of stability for weighted finite difference schemes in transient process simulation in diode power semiconductor structures \jour Num. Meth. Prog. \yr 2011 \vol 12 \issue 1 \pages 97--102 \mathnet{http://mi.mathnet.ru/vmp173}