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Num. Meth. Prog., 2010, Volume 11, Issue 3, Pages 210–214 (Mi vmp312)  

Вычислительные методы и приложения

A special doping regime in silicon wafer nanocolumns

G. A. Tarnavskii

Institute of Computational Mathematics and Mathematical Geophysics (Computing Center), Siberian Branch of the Russian Academy of Sciences, Novosibirsk

Abstract: Computer simulation for the ion implantation of impurities into silicon plate surface nanocolumns is conducted when the ion stream line is parallel to the plate base.

Keywords: computer simulation; doping in silicon; implantation; donor and acceptor impurities.

Full text: PDF file (537 kB)
UDC: 519.2:541.1

Citation: G. A. Tarnavskii, “A special doping regime in silicon wafer nanocolumns”, Num. Meth. Prog., 11:3 (2010), 210–214

Citation in format AMSBIB
\Bibitem{Tar10}
\by G.~A.~Tarnavskii
\paper A special doping regime in silicon wafer nanocolumns
\jour Num. Meth. Prog.
\yr 2010
\vol 11
\issue 3
\pages 210--214
\mathnet{http://mi.mathnet.ru/vmp312}


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