Surface roughness of thin film atomistic nanometer-size clusters
G. F. Grigor'ev, V. B. Sulimov, A. V. Tikhonravov
Lomonosov Moscow State University, Research Computing Center
An algorithm of surface roughness calculation for the thin film atomistic clusters obtained in numerical experiments is proposed. The algorithm is applied to silicon dioxide films. The thickness of deposited films is up to 70 nm. The deposition process simulation is performed using the classical molecular dynamics method with the DESIL force field developed earlier specially for high-energy deposition simulation. The dependence of surface roughness on the algorithm parameters, the temperature of the substrate, and the energy of deposited silicon atoms is studied.
surface roughness, molecular dynamics, thin films, silicon dioxide structure.
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G. F. Grigor'ev, V. B. Sulimov, A. V. Tikhonravov, “Surface roughness of thin film atomistic nanometer-size clusters”, Num. Meth. Prog., 17:4 (2016), 455–459
Citation in format AMSBIB
\by G.~F.~Grigor'ev, V.~B.~Sulimov, A.~V.~Tikhonravov
\paper Surface roughness of thin film atomistic nanometer-size clusters
\jour Num. Meth. Prog.
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