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Num. Meth. Prog., 2016, Volume 17, Issue 4, Pages 455–459 (Mi vmp851)  

Surface roughness of thin film atomistic nanometer-size clusters

G. F. Grigor'ev, V. B. Sulimov, A. V. Tikhonravov

Lomonosov Moscow State University, Research Computing Center

Abstract: An algorithm of surface roughness calculation for the thin film atomistic clusters obtained in numerical experiments is proposed. The algorithm is applied to silicon dioxide films. The thickness of deposited films is up to 70 nm. The deposition process simulation is performed using the classical molecular dynamics method with the DESIL force field developed earlier specially for high-energy deposition simulation. The dependence of surface roughness on the algorithm parameters, the temperature of the substrate, and the energy of deposited silicon atoms is studied.

Keywords: surface roughness, molecular dynamics, thin films, silicon dioxide structure.

Full text: PDF file (291 kB)
UDC: 536.75; 538.9
Received: 07.10.2016

Citation: G. F. Grigor'ev, V. B. Sulimov, A. V. Tikhonravov, “Surface roughness of thin film atomistic nanometer-size clusters”, Num. Meth. Prog., 17:4 (2016), 455–459

Citation in format AMSBIB
\Bibitem{GriSulTik16}
\by G.~F.~Grigor'ev, V.~B.~Sulimov, A.~V.~Tikhonravov
\paper Surface roughness of thin film atomistic nanometer-size clusters
\jour Num. Meth. Prog.
\yr 2016
\vol 17
\issue 4
\pages 455--459
\mathnet{http://mi.mathnet.ru/vmp851}


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