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Zh. Vychisl. Mat. Mat. Fiz., 2000, Volume 40, Number 11, Pages 1706–1715 (Mi zvmmf1424)  

This article is cited in 5 scientific papers (total in 5 papers)

A method for solving the Stefan problem in a two-phase domain with a nonplanar interface

V. A. Goncharov

Moscow State Institute of Electronic Technology (Technical University)

Full text: PDF file (1775 kB)
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English version:
Computational Mathematics and Mathematical Physics, 2000, 40:11, 1638–1646

Bibliographic databases:
UDC: 519.633.6
MSC: Primary 65M06; Secondary 82D25, 35Q30, 35R35
Received: 15.11.1999
Revised: 23.06.2000

Citation: V. A. Goncharov, “A method for solving the Stefan problem in a two-phase domain with a nonplanar interface”, Zh. Vychisl. Mat. Mat. Fiz., 40:11 (2000), 1706–1715; Comput. Math. Math. Phys., 40:11 (2000), 1638–1646

Citation in format AMSBIB
\Bibitem{Gon00}
\by V.~A.~Goncharov
\paper A method for solving the Stefan problem in a two-phase domain with a nonplanar interface
\jour Zh. Vychisl. Mat. Mat. Fiz.
\yr 2000
\vol 40
\issue 11
\pages 1706--1715
\mathnet{http://mi.mathnet.ru/zvmmf1424}
\mathscinet{http://www.ams.org/mathscinet-getitem?mr=1831002}
\zmath{https://zbmath.org/?q=an:1004.65089}
\transl
\jour Comput. Math. Math. Phys.
\yr 2000
\vol 40
\issue 11
\pages 1638--1646


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    Citing articles on Google Scholar: Russian citations, English citations
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    This publication is cited in the following articles:
    1. N. A. Baldina, B. V. Vasekin, V. A. Goncharov, “Simulation of abnormal radial impurity inhomogeneity formation in space experiments on crystal growth”, Math. Models Comput. Simul., 2:3 (2010), 341–348  mathnet  crossref  zmath
    2. Baldina N.A., Vasekin B.V., Goncharov V.A., “Mathematical modeling of radial impurity distribution in crystals grown under laminar convection conditions”, Theoretical Foundations of Chemical Engineering, 43:4 (2009), 353–360  crossref  isi  scopus
    3. Goncharov V.A., Azanova I.V., Vasekin B.V., “Model of nonequilibrium crystallization for the numerical solution to the problem of semiconductor crystal growth from melts”, Semiconductors, 45:13 (2011), 1632–1637  crossref  adsnasa  isi  elib  scopus
    4. Goncharov V.A., Dormidontov A.N., “Primenenie trekhsloinogo poperemenno-treugolnogo metoda dlya resheniya uravneniya puassona v matematicheskoi modeli vyraschivaniya kristallov poluprovodnikov”, Vestnik moskovskoi gosudarstvennoi akademii delovogo administrirovaniya. seriya: filosofskie, sotsialnye i estestvennye nauki, 2012, no. 3, 154–158  mathscinet  elib
    5. Goncharov V.A. Dormidontov A.N., “Numerical Simulation of the Effect of Non-Steady-State Conditions on the Formation of Concentration Growth Striations When Growing Crystals By the Bridgman Method”, Semiconductors, 48:13 (2014), 1716–1719  crossref  adsnasa  isi  elib  scopus
  • Журнал вычислительной математики и математической физики Computational Mathematics and Mathematical Physics
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